NPT25100B

28V GaN Power Amplifier

MACOM

NPT25100B Features

* GaN on Si HEMT D-Mode Power Amplifier

* Suitable for Linear & Saturated Applications

* Broadband Operation from 2.1 - 2.7 GHz

* 125 W P3dB Peak Envelope Power

* 90 W P3dB CW Power

* 10 W Linear Power @ 2% EVM for Single Carrier OFDM, 10.3 dB peak/avg

NPT25100B General Description

The NPT25100 GaN on silicon HEMT D-Mode amplifier optimized for 2.1 - 2.7 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 125 W in an industry standard plastic package with bolt down flange. NPT25100B NPT25100 Rev. V1 NPT25100P Ordering Informatio.

NPT25100B Datasheet (0.98 MB)

NPT25100B Datasheet Preview — Preview of NPT25100B PDF

Datasheet Details

Part number:

NPT25100B

Manufacturer:

MACOM

File Size:

0.98 MB

Description:

28v gan power amplifier.

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NPT25100B 28V GaN Power Amplifier MACOM

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NPT25100B Features

NPT25100B General Description

Datasheet Details

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Description:

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