Datasheet4U Logo Datasheet4U.com

NPT2020-SMB2

GaN Wideband Transistor

NPT2020-SMB2 Features

* GaN on Si HEMT Depletion Mode Transistor

* Suitable for Linear and Saturated Applications

* Tunable from DC - 3.5 GHz

* 48 V Operation

* 13.5 dB Gain at 3.5 GHz

* 55 % Drain Efficiency at 3.5 GHz

* 100 % RF Tested

* Standard package with bolt down flange

* RoHS

NPT2020-SMB2 General Description

The NPT2020 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 50 W (47 dBm) in an industry standard surface mount package. The NPT2020 is ideally suited for defense communications, land mobile rad.

NPT2020-SMB2 Datasheet (1.16 MB)

Preview of NPT2020-SMB2 PDF

Datasheet Details

Part number:

NPT2020-SMB2

Manufacturer:

MA-COM

File Size:

1.16 MB

Description:

Gan wideband transistor.

📁 Related Datasheet

NPT2020 GaN Wideband Transistor (MA-COM)

NPT2021 GaN Wideband Transistor (MA-COM)

NPT2022 HEMT D-Mode Amplifier (MA-COM)

NPT2010 GaN HEMT (Nitronex)

NPT2010 GaN on Silicon General Purpose Amplifier (MACOM)

NPT2018 GaN HEMT (Nitronex)

NPT2019 GaN HEMT (Nitronex)

NPT25 Press Fit Triac (Naina Semiconductor)

NPT25100 28V GaN Power Amplifier (MACOM)

NPT25100B 28V GaN Power Amplifier (MACOM)

TAGS

NPT2020-SMB2 GaN Wideband Transistor MA-COM

Image Gallery

NPT2020-SMB2 Datasheet Preview Page 2 NPT2020-SMB2 Datasheet Preview Page 3

NPT2020-SMB2 Distributor