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NPT1015B, NPT1015B-MA GaN Wideband Transistor

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Description

NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz .
The NPT1015 GaN HEMT is a wideband transistor optimized for DC - 3.

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This datasheet PDF includes multiple part numbers: NPT1015B, NPT1015B-MA. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
NPT1015B, NPT1015B-MA
Manufacturer
MA-COM
File Size
1.46 MB
Datasheet
NPT1015B-MA-COM.pdf
Description
GaN Wideband Transistor
Note
This datasheet PDF includes multiple part numbers: NPT1015B, NPT1015B-MA.
Please refer to the document for exact specifications by model.

Features

* GaN on Si HEMT D-Mode Transistor

Applications

* Tunable from DC - 3.5 GHz
* 28 V Operation
* 12 dB Gain @ 2.5 GHz
* 54 % Drain Efficiency @ 2.5 GHz
* 100 % RF Tested
* Standard metal ceramic package with bolt down flange
* RoHS

NPT1015B Distributors

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