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NPT2019 Datasheet - Nitronex

NPT2019 GaN HEMT

The NPT2019 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This device has been designed for CW, pulsed, and linear operation with pulsed output power levels to 25W (44 dBm) in an industry standard surface mount plastic package. RF Specifications (Pulsed *, 2.5 GHz): VDS = 4.

NPT2019 Features

* Suitable for linear and pulsed applications

* Tunable from DC-6 GHz

* 48V Operation

* Industry Standard Plastic Package

* High Drain Efficiency (>60%) Applications

* Defense Communications

* Land Mobile Radio

* Avionics

* Wireless Infrastructure

* ISM Appli

NPT2019 Datasheet (889.29 KB)

NPT2019 Datasheet Preview — Preview of NPT2019 PDF

Datasheet Details

Part number:

NPT2019

Manufacturer:

Nitronex

File Size:

889.29 KB

Description:

Gan hemt.

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NPT2019 GaN HEMT Nitronex

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