NPT2019 GaN HEMT

Description

NPT2019 Preliminary Gallium Nitride 48V, 25W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology .
The NPT2019 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation.

📥 Download Datasheet

NPT2019 Datasheet Preview — Preview of NPT2019 PDF

Datasheet Specifications

Part number: NPT2019
Manufacturer: Nitronex
File Size: 889.29 KB
Datasheet: NPT2019-Nitronex.pdf
Description: GaN HEMT

Applications

* Tunable from DC-6 GHz
* 48V Operation
* Industry Standard Plastic Package
* High Drain Efficiency (>60%) Applications
* Defense Communications
* Land Mobile Radio
* Avionics
* Wireless Infrastructure
* ISM Applications
* VHF/UHF/L/S-Band Radar DC-6 GHz 25W

NPT2019 Distributors

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NPT2019 GaN HEMT Nitronex

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