NPT2018 Datasheet - Nitronex

NPT2018 GaN HEMT

The NPT2018 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12.5W (41 dBm) in an industry standard surface mount plastic package. RF Specifications (CW, 2.5 GHz): VDS = 48V, IDQ = 75mA.

NPT2018 Features

* Suitable for linear and saturated applications

* Tunable from DC-6 GHz

* 48V Operation

* Industry Standard Plastic Package

* High Drain Efficiency (>60%) Applications

* Defense Communications

* Land Mobile Radio

* Avionics

* Wireless Infrastructure

* ISM Ap

NPT2018-Nitronex.pdf

NPT2018 Datasheet Preview — Preview of NPT2018 PDF

Datasheet Details

Part number:

NPT2018

Manufacturer:

Nitronex

File Size:

897.71 KB

Description:

Gan hemt.

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NPT2018 NPT2018 GaN HEMT Nitronex

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