Part number:
NPT2018
Manufacturer:
Nitronex
File Size:
897.71 KB
Description:
Gan hemt.
Datasheet Details
The NPT2018 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation.
This device has been designed for CW, pulsed, and linear operation with output power levels to 12.5W (41 dBm) in an industry standard surface mount plastic package.
RF Specifications (CW, 2.5 GHz): VDS = 48V, IDQ = 75mA
NPT2018 Features
* Suitable for linear and saturated applications
* Tunable from DC-6 GHz
* 48V Operation
* Industry Standard Plastic Package
* High Drain Efficiency (>60%) Applications
* Defense Communications
* Land Mobile Radio
* Avionics
* Wireless Infrastructure
* ISM Ap
Datasheet Details
NPT2018
Nitronex
897.71 KB
Gan hemt.
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