Datasheet4U Logo Datasheet4U.com

NPT2018

GaN HEMT

NPT2018 Features

* Suitable for linear and saturated applications

* Tunable from DC-6 GHz

* 48V Operation

* Industry Standard Plastic Package

* High Drain Efficiency (>60%) Applications

* Defense Communications

* Land Mobile Radio

* Avionics

* Wireless Infrastructure

* ISM Ap

NPT2018 General Description

The NPT2018 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12.5W (41 dBm) in an industry standard surface mount plastic package. RF Specifications (CW, 2.5 GHz): VDS = 48V, IDQ = 75mA.

NPT2018 Datasheet (897.71 KB)

Preview of NPT2018 PDF

Datasheet Details

Part number:

NPT2018

Manufacturer:

Nitronex

File Size:

897.71 KB

Description:

Gan hemt.

📁 Related Datasheet

NPT2010 GaN HEMT (Nitronex)

NPT2010 GaN on Silicon General Purpose Amplifier (MACOM)

NPT2019 GaN HEMT (Nitronex)

NPT2020 GaN Wideband Transistor (MA-COM)

NPT2020-SMB2 GaN Wideband Transistor (MA-COM)

NPT2021 GaN Wideband Transistor (MA-COM)

NPT2022 HEMT D-Mode Amplifier (MA-COM)

NPT25 Press Fit Triac (Naina Semiconductor)

NPT25100 28V GaN Power Amplifier (MACOM)

NPT25100B 28V GaN Power Amplifier (MACOM)

TAGS

NPT2018 GaN HEMT Nitronex

Image Gallery

NPT2018 Datasheet Preview Page 2 NPT2018 Datasheet Preview Page 3

NPT2018 Distributor