NPT2018 GaN HEMT

Description

NPT2018 Preliminary Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology .
The NPT2018 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation.

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NPT2018 Datasheet Preview — Preview of NPT2018 PDF

Datasheet Specifications

Part number: NPT2018
Manufacturer: Nitronex
File Size: 897.71 KB
Datasheet: NPT2018-Nitronex.pdf
Description: GaN HEMT

Applications

* Tunable from DC-6 GHz
* 48V Operation
* Industry Standard Plastic Package
* High Drain Efficiency (>60%) Applications
* Defense Communications
* Land Mobile Radio
* Avionics
* Wireless Infrastructure
* ISM Applications
* VHF/UHF/L/S-Band Radar DC-6 GHz 12.

NPT2018 Distributors

📁 Related Datasheet

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GaN HEMT Nitronex

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