The NPT2020 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation.
This device supports CW, pulsed, and linear operation with output power levels to 50 W (47 dBm) in an industry standard surface mount package.
The NPT2020 is ideally suited for defense communications, land mobile rad
NPT2020 Features
* GaN on Si HEMT Depletion Mode Transistor
* Suitable for Linear and Saturated Applications
* Tunable from DC - 3.5 GHz
* 48 V Operation
* 13.5 dB Gain at 3.5 GHz
* 55 % Drain Efficiency at 3.5 GHz
* 100 % RF Tested
* Standard package with bolt down flange
* RoHS
Datasheet Details
NPT2020, NPT2020-MA
MA-COM
1.16 MB
Gan wideband transistor.
This datasheet PDF includes multiple part numbers: NPT2020, NPT2020-MA.
Please refer to the document for exact specifications by model.
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