NPTB00004B

GaN Power Transistor

MA-COM

NPTB00004B Features

* GaN on Si HEMT D-Mode Transistor

* Suitable for linear and saturated applications

* Tunable from DC - 6 GHz

* 28 V Operation

* 14.8 dB Gain @ 2.5 GHz

* 57 % Drain Efficiency @ 2.5 GHz

* 100 % RF Tested

* Industry standard SOIC plastic

NPTB00004B General Description

The NPTB00004B GaN HEMT is a power transistor optimized for DC - 6 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 5 W (37 dBm) in an industry standard surface mount plastic package. Ordering Information Part Number NPTB00004B NPTB00004B-SMB NPTB0000.

NPTB00004B Datasheet (2.17 MB)

NPTB00004B Datasheet Preview — Preview of NPTB00004B PDF

Datasheet Details

Part number:

NPTB00004B

Manufacturer:

MA-COM

File Size:

2.17 MB

Description:

Gan power transistor.

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NPTB00004B GaN Power Transistor MA-COM

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NPTB00004B Features

NPTB00004B General Description

Datasheet Details

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Description:

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