NPTB00004B, NPTB00004B-MA GaN Power Transistor

MA-COM

Description

GaN Power Transistor, 28 V, 5 W DC - 6 GHz .
The NPTB00004B GaN HEMT is a power transistor optimized for DC - 6 GHz operation.

📥 Download Datasheet

NPTB00004B Datasheet Preview — This datasheet PDF includes multiple part numbers: NPTB00004B, NPTB00004B-MA. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: NPTB00004B, NPTB00004B-MA
Manufacturer: MA-COM
File Size: 2.17 MB
Datasheet: NPTB00004B-MA-COM.pdf
Description: GaN Power Transistor
Note: This datasheet PDF includes multiple part numbers: NPTB00004B, NPTB00004B-MA.
Please refer to the document for exact specifications by model.

Features

* GaN on Si HEMT D-Mode Transistor

Applications

* Tunable from DC - 6 GHz
* 28 V Operation
* 14.8 dB Gain @ 2.5 GHz
* 57 % Drain Efficiency @ 2.5 GHz
* 100 % RF Tested
* Industry standard SOIC plastic package
* RoHS
* Compliant Applications
* Defense Communications
* Land

NPTB00004B Distributors

📁 Related Datasheet

NPT15 NPT2010 NPT2018 NPT2019 NPT25 NPT25100

📌 All Tags

NPTB00004B-MA GaN Power Transistor MA-COM

MA-COM NPTB00004B-like datasheet