NPT25100 Datasheet - MACOM

NPT25100 28V GaN Power Amplifier

The NPT25100 GaN on silicon HEMT D-Mode amplifier optimized for 2.1 - 2.7 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 125 W in an industry standard plastic package with bolt down flange. NPT25100B NPT25100 Rev. V1 NPT25100P Ordering Informatio.

NPT25100 Features

* GaN on Si HEMT D-Mode Power Amplifier

* Suitable for Linear & Saturated Applications

* Broadband Operation from 2.1 - 2.7 GHz

* 125 W P3dB Peak Envelope Power

* 90 W P3dB CW Power

* 10 W Linear Power @ 2% EVM for Single Carrier OFDM, 10.3 dB peak/avg

NPT25100-MACOM.pdf