NPT2021

GaN Wideband Transistor

MA-COM

NPT2021 Features

* GaN on Si HEMT D-Mode Transistor

* Suitable for linear and saturated applications

* Tunable from DC - 2.5 GHz

* 48 V Operation

* 16.5 dB Gain at 2.5 GHz

* 55 % Drain Efficiency at 2.5 GHz

* 100 % RF Tested

* TO-272 Package

* RoHS

* Compliant and 260°C reflow

NPT2021 General Description

The NPT2021 GaN HEMT is a wideband transistor optimized for DC - 2.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W in an industry standard plastic package with bolt down flange. The NPT2021 is ideally suited for defense communications, land mob.

NPT2021 Datasheet (1.47 MB)

NPT2021 Datasheet Preview — Preview of NPT2021 PDF

Datasheet Details

Part number:

NPT2021

Manufacturer:

MA-COM

File Size:

1.47 MB

Description:

Gan wideband transistor.

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NPT2021 GaN Wideband Transistor MA-COM

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NPT2021 Features

NPT2021 General Description

Datasheet Details

File Size:

Description:

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