NPT2021 Datasheet, Transistor, MA-COM

NPT2021 Features

• Transistor
• GaN on Si HEMT D-Mode Transistor
• Suitable for linear and saturated applications
• Tunable from DC - 2.5 GHz
• 48 V Operation
• 16.5 dB Gain a

PDF File Details

Part number:

NPT2021

Manufacturer:

MA-COM

File Size:

1.47MB

Download:

📄 Datasheet

Description:

Gan wideband transistor. The NPT2021 GaN HEMT is a wideband transistor optimized for DC - 2.5 GHz operation. This device supports CW, pulsed, and linear opera

NPT2021 Application

• Applications
• Tunable from DC - 2.5 GHz
• 48 V Operation
• 16.5 dB Gain at 2.5 GHz
• 55 % Drain Efficiency at 2.5 G

TAGS

NPT2021

MA-COM

📁 Related Datasheet

NPT2020 - GaN Wideband Transistor (MA-COM)
NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Features  GaN on Si HEMT Depletion Mode Transistor  Suitable for Linear and Saturated Applic.

NPT2020-SMB2 - GaN Wideband Transistor (MA-COM)
NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Features  GaN on Si HEMT Depletion Mode Transistor  Suitable for Linear and Saturated Applic.

NPT2022 - HEMT D-Mode Amplifier (MA-COM)
GaN on Silicon General Purpose Amplifier DC - 2 GHz, 48 V, 100 W Features • GaN on Si HEMT D-Mode Amplifier • Suitable for Linear & Saturated Applica.

NPT2010 - GaN HEMT (Nitronex)
NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features  Suitable for.

NPT2010 - GaN on Silicon General Purpose Amplifier (MACOM)
NPT2010 GaN on Silicon General Purpose Amplifier DC - 2.2 GHz, 48 V, 100 W Features  GaN on Si HEMT D-Mode Amplifier  Suitable for Linear & Saturate.

NPT2018 - GaN HEMT (Nitronex)
NPT2018 Preliminary Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features .

NPT2019 - GaN HEMT (Nitronex)
NPT2019 Preliminary Gallium Nitride 48V, 25W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features  .

NPT25 - Press Fit Triac (Naina Semiconductor)
Naina Semiconductor Ltd. Press Fit Triac ½”, 25 Amps Features • Improved glass passivation for high reliability • Exceptional stability at high temper.

NPT25100 - 28V GaN Power Amplifier (MACOM)
GaN Power Amplifier, 28 V, 125 W 2.1 - 2.7 GHz Features • GaN on Si HEMT D-Mode Power Amplifier • Suitable for Linear & Saturated Applications • Broad.

NPT25100B - 28V GaN Power Amplifier (MACOM)
GaN Power Amplifier, 28 V, 125 W 2.1 - 2.7 GHz Features • GaN on Si HEMT D-Mode Power Amplifier • Suitable for Linear & Saturated Applications • Broad.