The NPT2021 GaN HEMT is a wideband transistor optimized for DC - 2.5 GHz operation.
This device supports CW, pulsed, and linear operation with output power levels to 45 W in an industry standard plastic package with bolt down flange.
The NPT2021 is ideally suited for defense communications, land mob
NPT2021 Features
* GaN on Si HEMT D-Mode Transistor
* Suitable for linear and saturated applications
* Tunable from DC - 2.5 GHz
* 48 V Operation
* 16.5 dB Gain at 2.5 GHz
* 55 % Drain Efficiency at 2.5 GHz
* 100 % RF Tested
* TO-272 Package
* RoHS
* Compliant and 260°C reflow
Datasheet Details
NPT2021, NPT2021-MA
MA-COM
1.47 MB
Gan wideband transistor.
This datasheet PDF includes multiple part numbers: NPT2021, NPT2021-MA.
Please refer to the document for exact specifications by model.
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