NPT25100P
MACOM
0.98MB
28v gan power amplifier. The NPT25100 GaN on silicon HEMT D-Mode amplifier optimized for 2.1 - 2.7 GHz operation. This device supports CW, pulsed, and linear
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(MACOM)
GaN Power Amplifier, 28 V, 125 W 2.1 - 2.7 GHz
Features
• GaN on Si HEMT D-Mode Power Amplifier • Suitable for Linear & Saturated Applications • Broad.
NPT25100B - 28V GaN Power Amplifier
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GaN Power Amplifier, 28 V, 125 W 2.1 - 2.7 GHz
Features
• GaN on Si HEMT D-Mode Power Amplifier • Suitable for Linear & Saturated Applications • Broad.
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Features
Suitable for.
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(MACOM)
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Features
GaN on Si HEMT D-Mode Amplifier Suitable for Linear & Saturate.
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NPT2018
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Features
.
NPT2019 - GaN HEMT
(Nitronex)
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Gallium Nitride 48V, 25W, DC-6 GHz HEMT
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Features
.
NPT2020 - GaN Wideband Transistor
(MA-COM)
NPT2020
GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz
Features
GaN on Si HEMT Depletion Mode Transistor Suitable for Linear and Saturated Applic.
NPT2020-SMB2 - GaN Wideband Transistor
(MA-COM)
NPT2020
GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz
Features
GaN on Si HEMT Depletion Mode Transistor Suitable for Linear and Saturated Applic.
NPT2021 - GaN Wideband Transistor
(MA-COM)
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GaN Wideband Transistor 48 V, 45 W DC - 2.5 GHz
Features
GaN on Si HEMT D-Mode Transistor Suitable for linear and saturated applications .
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