The NPT25100 GaN on silicon HEMT D-Mode amplifier optimized for 2.1 - 2.7 GHz operation.
This device supports CW, pulsed, and linear operation with output power levels to 125 W in an industry standard plastic package with bolt down flange.
NPT25100B NPT25100 Rev.
V1 NPT25100P Ordering Informatio
NPT25100P Features
* GaN on Si HEMT D-Mode Power Amplifier
* Suitable for Linear & Saturated Applications
* Broadband Operation from 2.1 - 2.7 GHz
* 125 W P3dB Peak Envelope Power
* 90 W P3dB CW Power
* 10 W Linear Power @ 2% EVM for Single Carrier OFDM, 10.3 dB peak/avg
Datasheet Details
NPT25100P, NPT25100
MACOM
0.98 MB
28v gan power amplifier.
This datasheet PDF includes multiple part numbers: NPT25100P, NPT25100.
Please refer to the document for exact specifications by model.
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