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PTF080901 Datasheet | Specifications & PDF Download

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PTF080901 LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz

PTF080901 LDMOS RF Power Field Effect Transistor .

Infineon Technologies AG

PTF080901E - LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz

PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for E.
Rating: 1 (3 votes)
Infineon Technologies AG

PTF080901 - LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz

PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for E.
Rating: 1 (2 votes)
Infineon Technologies AG

PTF080901F - LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz

PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for E.
Rating: 1 (1 votes)
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