PTF080901 LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz

Infineon Technologies AG

Description

PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869 *960 MHz .
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.

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Datasheet Specifications

Part number: PTF080901
Manufacturer: Infineon ↗ Technologies AG
File Size: 205.95 KB
Datasheet: PTF080901_InfineonTechnologiesAG.pdf
Description: LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz

Features

* Broadband internal matching Typical EDGE performance - Average output power = 45 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P
* 1dB = 120 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Exc

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PTF080901 LDMOS Power Field Effect Transistor 869-960 MHz Infineon Technologies AG

Infineon Technologies AG PTF080901-like datasheet