PTFB201402FC High Power RF LDMOS Field Effect Tra.
PTFB201402FC - High Power RF LDMOS Field Effect Transistor
PTFB201402FC High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs in.PTFB201402FC - High Power RF LDMOS Field Effect Transistor
PTFB201402FC High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs int.