Photothyristor Datasheet | Specifications & PDF Download

S22MD1V/S22MD3 S22MD1V/S22MD3 .. s Features 1. High repetitive peak OFF-state voltage ( VDRM : MIN. 600V ) 2. Low trigger current ( IFT : MAX. 10mA a

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S12MD1V/S12MD3 S12MD1V/S12MD3 s Features 1. High RMS ON-state current ( IT : MAX. 200mA rms ) 2. High repetitive peak OFF-state voltage ( VDRM : MIN.

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S12ME1/S12ME1F S12ME1/S12ME1F s Features 1. Internal insulation distance : 0.4mm or more 2. Creepage distance : 8mm or more Space distance : 5mm or m

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S12MD1V/S12MD3 S12MD1V/S12MD3 s Features 1. High RMS ON-state current ( IT : MAX. 200mA rms ) 2. High repetitive peak OFF-state voltage ( VDRM : MIN.

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S12MD1V/S12MD3 S12MD1V/S12MD3 s Features 1. High RMS ON-state current ( IT : MAX. 200mA rms ) 2. High repetitive peak OFF-state voltage ( VDRM : MIN.

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S22MD1V/S22MD3 S22MD1V/S22MD3 .. s Features 1. High repetitive peak OFF-state voltage ( VDRM : MIN. 600V ) 2. Low trigger current ( IFT : MAX. 10mA a

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S22MD2 S22MD2 s Features 1. Long distance between anode and cathode of photothyristor on the output side : 5.08mm 2. High repetitive peak OFF-state v

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NTE3046 Optoisolator SCR Photothyristor Output Description: The NTE3046 consists of a photo SCR coupled to a gallium arsenide infrared diode in a 6–Le

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S12ME1/S12ME1F S12ME1/S12ME1F s Features 1. Internal insulation distance : 0.4mm or more 2. Creepage distance : 8mm or more Space distance : 5mm or m

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