Pyramid Semiconductor Datasheet | Specifications & PDF Download

P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 12/15/20/25/35

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P4C167/P4C167L ULTRA HIGH SPEED 16K X 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Co

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Legacy Device: Motorola MC672 ML672 Quad 2-Input “Nand” Gate www.DataSheet4U.com Page 1 of 1 www.lansdale.com Issue 0

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P4C1023/P4C1023L LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM FEATURES VCC Current — Operating: 35mA — CMOS Standby: 100µA Access Times —55/7

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P4C1024L LOW POWER 128K x 8 CMOS STATIC RAM FEATURES VCC Current (Commercial/Industrial) — Operating: 70mA/85mA — CMOS Standby: 100µA/100µA Access Tim

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P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 15/20/25/35 ns (Commercial/I

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P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 12/15/20/25/35

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P4C163/P4C163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 25/35ns (Commercial) –

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P4C163/P4C163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 25/35ns (Commercial) –

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P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 12/15/20/25/35

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P4C1023/P4C1023L LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM FEATURES VCC Current — Operating: 35mA — CMOS Standby: 100µA Access Times —55/7

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P4C165 ULTRA HIGH SPEED 8K x 8 RESETTABLE STATIC CMOS RAM FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 15/20/25 ns (Commerc

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P4C167/P4C167L ULTRA HIGH SPEED 16K X 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Co

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