.
MagnaChip
156
70R600P - N-channel MOSFET
MMD70R600P Datasheet MMD70R600P 700V 0.6Ω N-channel MOSFET Description MMD70R600P is power MOSFET using magnachip’s advanced super junction technol.
HAOCHANG
98
PCR606 - Silicon Planar pnpn Thyristor
SHENZHEN HAOCHANG SEMICONDUCTOR CO.,LTD. TO-92 Plastic-Encapsulate Thyristors PCR606 Silicon Planar pnpn Thyristor TO-92 MAIN FEATURES Symbol v .
KCD
42
PCR606J - Sensitive Gate Silicon Controlled Rectifiers
PCR606J Sensitive Gate Silicon Controlled Rectifiers Symbol 2. Gate ○ Features www.DataSheet4U.com ▼ 1 23 ○ ○ 3. Anode 1. Cathode Repetitive Pe.
ROUM
40
MUR6030NCA - 60A 300V Fast recovery diode
60A 300V Fast recovery diode 1 Description 60A, 300V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passiv.
Digitron Semiconductors
36
MUR6030 - 60A ULTRA FAST RECOVERY RECTIFIERS
MUR6020-MUR6040 High-reliability discrete products and engineering services since 1977 60A ULTRA FAST RECOVERY RECTIFIERS FEATURES: Available as .
Unigroup
28
65R600C - 650V Super-Junction Power MOSFET
TPA65R600C, TPB65R600C, TPC65R600C, TPD65R600C, TPP65R600C, TPU65R600C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURE.
Naina Semiconductor
24
200NSR60 - Standard Recovery Diodes
Naina Semiconductor Ltd. 200NS(R) Standard Recovery Diodes (Stud and Flat Base Type) Features • Diffused Series • Industrial grade • Available in No.
CR Micro
24
HPD600R600PC-G - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R HPD600R600PC-G General Description： HPD600R600PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the su.
MagnaChip
21
MMD65R600Q - N-Channel MOSFET
MMD65R600Q Datasheet MMD65R600Q 650V 0.60Ω N-channel MOSFET Description MMD65R600Q is power MOSFET using Magnachip’s advanced super junction techno.
Legendary
20
LDR6023 - USB Type-C PD Controller
LDR6023 USB Type-C PD Controller LDR6023 USB Type-C PD Controller REV2.2 REV1.0 REV2.0 REV2.1 REV2.2 Document History New data sheet. Updated Packa.
EIC
18
HER608 - HIGH EFFICIENT RECTIFIER DIODES
www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 HER601 - HER608 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts D6 Io : 6.
GeneSiC
17
150KR60A - Silicon Standard Recovery Diode
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 200 V to 1000 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stu.
Naina Semiconductor
16
320NSR60 - Standard Recovery Diodes
Naina Semiconductor Ltd. 320NS(R) Standard Recovery Diodes (Stud and Flat Base Type) Features • Diffused Series • Industrial grade • Available in No.
STMicroelectronics
16
STBR6008-Y - 60A bridge rectifier diode
STBR6008-Y Datasheet Automotive 800 V, 60 A bridge rectifier diode AK A K DO-247 Product status link STBR6008-Y Product summary Symbol Value IF(.
Naina Semiconductor
15
400NSR60 - Standard Recovery Diodes
Naina Semiconductor Ltd. 400NS(R) Standard Recovery Diodes (Stud and Flat Base Type) Features • Diffused Series • Industrial grade • Available in No.
Rohm
14
R6025ANZ - Nch 600V 25A Power MOSFET
R6025ANZ Nch 600V 25A Power MOSFET Datasheet VDSS RDS(on)(Max.) ID PD 600V 0.15Ω ±25A 150W lOutline TO-3PF l.
Unigroup
14
TPP65R600C - 650V Super-Junction Power MOSFET
TPA65R600C, TPB65R600C, TPC65R600C, TPD65R600C, TPP65R600C, TPU65R600C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURE.
Unigroup
14
TPD65R600C - 650V Super-Junction Power MOSFET
TPA65R600C, TPB65R600C, TPC65R600C, TPD65R600C, TPP65R600C, TPU65R600C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURE.
CITC
13
FR608 - 6A Leaded Type Fast Rectifiers
FR6005 THRU FR610 6A Leaded Type Fast Rectifiers ■ Features • Axial lead type devices for through hole design. • High current capability. • Fast swit.