R95 Datasheet | Specifications & PDF Download

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 650V 650V CoolMOS™ C6 Power Transistor IPD65R950C6 Data Sheet Rev. 2.0 Final I

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Silicon N-Channel Power MOSFET HPU700R950SA General Description： HPU700R950SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junct

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 Product Introduction Token Offers Dielectric RF Filters for Telecoms. Features :  Suitable for surface mount and reflow soldering.  Excellent mech

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1 Appearance and Dimensions (mm) (mm) High Current Power Inductor CSCIL1050 Series Outline: ▪ Magnetic shielding structure, excellent resistance to

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IPD50R950CE, IPU50R950CE MOSFET 500V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v

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PRELIMINARY SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 SDR953/3 thru SDR955

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IPI70R950CE, IPD70R950CE, IPS70R950CE MOSFET 700V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,

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isc N-Channel MOSFET Transistor IPD70R950CE,IIPD70R950CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanc

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Multilayer Ceramic Chip Capacitors FEATURES • X7R, X5R AND Y5V DIELECTRICS • HIGH CAPACITANCE & LOW PROFILE • RoHS COMPLIANT • SAC SOLDER COMPATIBLE R

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www.DataSheet4U.com Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche

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