RA-93.3S Datasheet | Specifications & PDF Download

AN1393 (AN6914), AN1393S (AN6914S) Dual Comparators AN1393 (AN6914) Unit:mm 0.5±0.1 1.2±0.25 0.51min. 3.8±0.25 (3.45) +0.1 s Overview The AN1393 (AN6

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TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/182 Devices 2N720A 2N1893 2N1893S Qualified Level JAN JANTX JANTXV M

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DISCONTINUED 08/06/2009 1N5391/S - 1N5399/S 1.5A RECTIFIER Features • Fast Switching for High Efficiency • High Current Capability and Low Forward Vo

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PBF493/D High Voltage Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER PBF493 PBF

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SANGDEST MICROELECTRONICS Technical Data Data Sheet N0546, Rev. - 1N5391S-1N5399S Green Products Marking Diagram: Cautions：Molding resin Epoxy resin

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BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 150 W LD

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BF493S High Voltage Transistor PNP Silicon Features • This is a Pb−Free Device* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Vol

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® A Leading Supplier of Magnetic Components 10/100 BASE-TX 10/100 BASE TRANSFORMER Features： ● Designed to meet IEEE 802.3 requirements. ● Primary

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MITSUBISHI ICs (AV COMMON) M52693SP BURST LOCK CLOCK GENERATOR DESCRIPTION The M52693SP is a semiconductor integrated circuit developed for analog s

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Datasheet SIGNATURE SERIES Comparators LM393xxx LM2903xx LM339xx LM2901xx General Description LM393xxx, LM2903xx, LM339xx, and LM2901xx monolithic I

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SG5127RD325693UU April 9, 2010 Ordering Information Part Numbers SG5127RD325693HB Description 512Mx72 (4GB), DDR3, 240-pin Registered DIMM, Parity, E

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol VCEO VCBO v EBO ic

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1N5391S THRU 1N5399S GENERAL PURPOSE PLASTIC SILICON RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.5 Ampere Features • Low cost •

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BF493S/D High Voltage Transistor PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER BF493S 1 2

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1N5391S Thru 1N5399S 1.0 (25.4) MIN. .034 (0.9) DIA. .028 (0.7) General Purpose Rectifiers Plastic Passivation Junction .205 (5.2) .165 (4.2) 1.0

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