RA26 Datasheet | Specifications & PDF Download

GTRA262802FC Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Description The GTRA262802FC is a 250-watt (P3dB) GaN on Si

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Chip Silicon Rectifier MURA205BG THRU MURA2100BG 2.0A Surface Mount High Effciency Rectifiers - 50V-1000V Features • Batch process design, excellent

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SKNa 26, SKRa 26 V(BR)min IFRMS = 40 A Cmax Rmin (maximum value for continuous operation) V IFAV = 26 A (sin. 180; Tc = 69 °C) µF Ω 1300 170

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(4 -( -=4 5* (2>> + =->+ 0 . ?6 / '>;4 @' 7@ 6@ A> >A9 0 . ?6 / (4 -( (4 2;*72;>2 46 9 0 . ?6 / (4 -( 2> >2+> 4 +7A= 4 75 B 0 . ?6 / & . / 2= 2

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GTRA263902FC Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz Description The GTRA263902FC is a 370-watt (P3dB) GaN on Si

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www.DataSheet4U.com MURA260T3 Preferred Device Surface Mount Ultrafast Power Rectifier Ideally suited for high voltage, high frequency rectification

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(4 -( -=4 5* (2>> + =->+ 0 . ?6 / '>;4 @' 7@ 6@ A> >A9 0 . ?6 / (4 -( (4 2;*72;>2 46 9 0 . ?6 / (4 -( 2> >2+> 4 +7A= 4 75 B 0 . ?6 / & . / 2= 2

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Chip Silicon Rectifier MURA205G THRU MURA2100G 2.0A Surface Mount High Effciency Rectifiers - 50V-1000V Features • Batch process design, excellent p

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MURA260T3G, SURA8260T3G Preferred Device Surface Mount Ultrafast Power Rectifier Ideally suited for high voltage, high frequency rectification, or as

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