RB-401 Datasheet | Specifications & PDF Download

WNSC2M40120B7 N-Channel Silicon Carbide MOSFET Rev.01 - 23 November 2023 Product data sheet 1. General description Silicon Carbide MOSFET in a TO263

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WNSC2M40120B7-A N-Channel Silicon Carbide MOSFET Rev.02 - 11 October 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TO26

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WNSC2D401200CW Silicon Carbide Diode Rev.02 - 13 May 2024 Product data sheet 1. General description Dual Silicon Carbide Schottky diode in a TO247-3

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WNSC2M40120R N-Channel Silicon Carbide MOSFET Rev.05 - 04 November 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TO247-

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WNSC2M40140R N-Channel Silicon Carbide MOSFET Rev.02 - 19 July 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TO247-4L p

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WNSC2M40120TB N-Channel Silicon Carbide MOSFET Rev.01 - 19 November 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TSPAK

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WNSC2M40120R-A N-Channel Silicon Carbide MOSFET Rev.01 - 13 November 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TO24

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MS2H40120G1 MS2H40120G1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -Hi

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WNSC2D401200CW-A Silicon Carbide Diode Rev.01 - 09 September 2024 Product data sheet 1. General description Dual Silicon Carbide Schottky diode in a

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NEW 20 20 For ESD CSA20 Series(EIA 0805 size) is a chip type surge absorber for protection from ESD (electrostatic discharge). Through our long hist

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C3M0040120D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • High blo

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www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/

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E3M0040120J2 Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET techn

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VDS 1200 V C3M0040120D ID @ 25˚C 66 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 40 mΩ N-Channel Enhancement Mode

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C2M0040120D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • High Blocking Voltage with Low On-Resistance •

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C4D40120H 4th Generation 1200 V, 40 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky B

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C3M0040120K1 Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • Optimized package with separate driver source pin • Lower profile TO

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SENSITRON SEMICONDUCTOR Technical Data Data Sheet 3208, Rev. B MBR4080/90/100CT MBRB4080/90/100CT MBR4080/90/100CT-1 MBR40…CT/MBRB40…CT/MBR40…CT-1 S

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VOLTAGE RANGE 50 to 1000 Volts CURRENT 4.0 Ampere FEATURES * Ideal for printed circuit board * Surge overload rating: 130 amperes peak * Mounting posi

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VOLTAGE RANGE 50 to 1000 Volts CURRENT 4.0 Ampere FEATURES * Ideal for printed circuit board * Surge overload rating: 130 amperes peak * Mounting posi

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