RB-402 Datasheet | Specifications & PDF Download

RBV401 - RBV406 PRV : 100 - 600 Volts Io : 4.0 Amperes SILICON BRIDGE RECTIFIERS RBV4 0.150 (3.8) 0.134 (3.4) C3 0.996 (25.3) 0.189 (4.8) 0.97

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www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/

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Bridge Diodes (Ultra-Fast-Recovery)

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Bridge Diodes (Ultra-Fast-Recovery)

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GTRB204402FC/1 Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 48 V, 1930 – 2020 MHz Description The GTRB204402FC/1 is a 350-watt (P3dB) GaN o

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Bridge Diodes (Ultra-Fast-Recovery) Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) With Heatsink Electrical Characteristics (Ta = 2

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VOLTAGE RANGE 50 to 1000 Volts CURRENT 4.0 Ampere FEATURES * Ideal for printed circuit board * Surge overload rating: 130 amperes peak * Mounting posi

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Production specification Silicon Bridge Rectifiers FEATURES z Ideal for printed circuit board z Reliable low cost construction utilizing molded plast

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Bridge Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) With Heatsink Electrical Characteristics (Ta = 25°C) Tstg (ºC) VF (V)

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www.DataSheet4U.com

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Bridge Diodes (Ultra-Fast-Recovery)

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Features Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Surge overload rating: 80 amperes peak RBV

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www.DataSheet4U.com

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GTRB224402FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 2110– 2200 MHz Description The GTRB224402FC is a 400-watt (P3dB) GaN on SiC

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Switch-mode Schottky Power Rectifier 250 V, 40 A MBR40250G, MBR40250TG, MBRF40250TG, MBRB40250TG Features  250 V Blocking Voltage  Low Forward Volta

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