RF101 Datasheet | Specifications & PDF Download

SEMICONDUCTOR IRF1010 Series N-Channel Power MOSFET (84A, 60Volts) D D RoHS RoHS Nell High Power Products DESCRIPTION The Nell IRF1010 is a three

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R

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MURF1005 THRU MURF1060 SUPER FAST RECOVERY SILICON RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 10.0 Ampere FEATURES Glass Passivate

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MBRF1020CT THRU MBRF10100CT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 10.0 Ampere FEATURES ● Plastic package has

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LITE-ON SEMICONDUCTOR MBRF10150CT thru 10200CT SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 150 to 200 Volts FORWARD CURRENT - 10 Amperes FEATURE

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AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanch

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SCHOTTKY BARRIER RECTIFIERS FEATURES • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss

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MBRF1045CT-Y thru MBRF10200CT-Y Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency -

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www.vishay.com MBRF1090CT, MBRF10100CT Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier TMBS® ITO-220AB PIN 1

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MCC
     omponents 20736 Marilla Street Chatsworth  # $ % # Features • Low power loss, h

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MBR10150CT, MBRF10150CT Dual Common-Cathode High-Voltage Schottky Barrier Rectifiers Reverse Voltage 150 Volts Forward Current 10.0 Amperes Features G

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MURF1005CT THRU MURF1040CT PRV : 50 - 200 Volts Io : 10 Ampere FEATURES : * Ideally suited for free wheeling diode power factor correction application

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MURF1005 thru MURF1060 Pb ® Pb Free Plating Product MURF1005 thru MURF1060 ITO-220AB .406(10.3) .381(9.7) .134(3.4) .118(3.0) 10.0 Ampere Isolated

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MBRF1035CT - MBRF10150CT Isolated 10.0 AMPS. Schottky Barrier Rectifiers ITO - 220AB Features 10.2± 0.2 4.5± 0.2 3.1+-00..12 Plastic material use

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MURF1005 thru MURF1060 Pb ® Pb Free Plating Product MURF1005 thru MURF1060 ITO-220AB .406(10.3) .381(9.7) .134(3.4) .118(3.0) 10.0 Ampere Isolated

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MURF1005CT THRU MURF1060CT SUPER FAST RECOVERY SILICON RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 10.0 Ampere FEATURES ● The plast

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MBR10100CT/MBRF10100CT Schottky Barrier Rectifier Reverse Voltage 100 V Forward Current 10 A Features ● Plastic package has underwriters Laboratory

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SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10120/D The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pul

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AUTOMOTIVE GRADE PD - 95962 Features O O O O O O O Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching R

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CREAT BY ART MBRF10100D - MBRF10200D 10.0AMPS Isolated Schottky Barrier Rectifier ITO-220AB Features — Plastic material used carries Underwriters

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