RF340 Datasheet | Specifications & PDF Download

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ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF340 DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for Fast Switch

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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA) Product Summary Part Number BVDSS IRF340 400V RDS(on) ID 0.55 1

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Preliminary RF3404 DUAL-BAND/TRI-MODE CDMA LOW NOISE AMPLIFIER/MIXER MODULE 8 Typical Applications • CDMA Cellular/PCS Handsets Product Description

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MRF340 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF340 is Designed for VHF Radios that use Collector Modulation in the Driver/Final Ampli

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IRF340 Data Sheet March 1999 File Number 2307.3 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field

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• Ideal Front-End Filter for European Wireless Receivers • Low-Loss, Coupled-Resonator Quartz Design • Simple External Impedance Matching • RoHS Co

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IRF340-343/IRF740-743 T-39-13 MTM8N35/8N40 N-Channel Power MOSFETs 10A, 350V/400V Description These devices are n-channel, enhancement mode, power MO

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Preliminary RF3404 DUAL-BAND/TRI-MODE CDMA LOW NOISE AMPLIFIER/MIXER MODULE 8 Typical Applications • CDMA Cellular/PCS Handsets Product Description

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RF3404D • • • • Ideal Front-End Filter for European Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching Co

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RF3404E • • • • • Ideal Front-End Filter for European Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching

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