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RQJ0603LGDQA Matched Datasheet

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No Part Number Description Manufacture PDF
2 RQJ0603LGDQA Silicon P Channel MOS FET Power Switching

RQJ0603LGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 158 mΩ typ (VGS = –10 V, ID = –0.9 A) • Low drive current • High speed switching • 4.5 V gate
Renesas
Renesas
RQJ0603LGDQA pdf
1 RQJ0603LGDQA Silicon P-Channel MOS FET

RQJ0603LGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 158 mΩ typ (VGS = –10 V, ID = –0.9 A) • Low drive current • High speed switching • 4.5 V gate
Renesas
Renesas
RQJ0603LGDQA pdf


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