RQJ0603LGDQA Datasheet | Specifications & PDF Download

RQJ0603LGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 158 mΩ typ (VGS = –10 V, ID = –0.9 A) • Low drive curren

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RQJ0603LGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 158 mΩ typ (VGS = –10 V, ID = –0.9 A) • Low drive curren

(9 views)