RQJ0603LGDQA Datasheet (Renesas) - Silicon P-Channel MOS FET

RQJ0603LGDQA, Silicon P-Channel MOS FET

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Renesa

RQJ0603LGDQA Features

* Low on-resistance RDS(on) = 158 mΩ typ (VGS =

* 10 V, ID =

* 0.9 A)

* Low drive current

* High speed switching

* 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “LG”. Preliminary Datasheet R07DS0