RU4 Datasheet | Specifications & PDF Download

VRM = 600 V, IF(AV) = 3.0 A, trr = 400 ns Fast Recovery Diode RU4A Data Sheet Description The RU4A is a high voltage fast recovery diode of 600 V /

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www.eicsemi.com RU4 - RU4B PRV : 400 - 800 Volts Io : 1.5 Amperes TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 FAST RECOVERY RECTIFIERS DIODES

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www.eicsemi.com RU4YX PRV : 100 Volts Io : 2.2 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low

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SANKEN ELECTRIC CO., LTD. 1. Scope The present specifications shall apply to an RU4D. 2. Outline Type Silicon Diode Structure Resin Molded Appl

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RoHS Silicon And Fast Recovery Rectifiers TYPE Maximum Maximum Peak Forward Recurrent Average Surge Current Peak Forward Half Reverse Rectified

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SANKEN ELECTRIC CO., LTD. 1. Scope The present specifications shall apply to an RU4Z. 2. Outline Type Silicon Diode Structure Resin Molded Appl

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www.eicsemi.com RU4 - RU4B PRV : 400 - 800 Volts Io : 1.5 Amperes TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 FAST RECOVERY RECTIFIERS DIODES

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RU4D-RU4DS High Efficiency Rectifiers VOLTAGE RANGE: 1300 V CURRENT: 1.5,2.5 A Features Low cost Diffus ed junction Low leakage Low forward voltage d

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RU40190R N-Channel Advanced Power MOSFET MOSFET Features • 40V/190A, RDS (ON) =2.5mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resi

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www.eicsemi.com RU4C PRV : 1000 Volts Io : 2.0 Amperes FAST RECOVERY RECTIFIERS DIODE DO - 201AD FEATURES : * High current capability * High surge c

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RU4Y - RU4Z PRV : 100 - 150 Volts Io : 2.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low rever

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RU4Y - RU4Z PRV : 100 - 150 Volts Io : 2.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low rever

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RU40L10L P-Channel Advanced Power MOSFET MOSFET Features • -40V/-32A, RDS (ON) =20mΩ(Typ.)@VGS=-10V RDS (ON) =30mΩ(Typ.)@VGS=-4.5V • Super High Dense

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RU4DS PRV : 1300 Volts Io : 2.5 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current

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SANKEN ELECTRIC CO., LTD. RU4M 1. Scope The present specifications shall apply to a RU4M. 2. Outline Type Silicon Diode Structure Resin Molded

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RU40191S N-Channel Advanced Power MOSFET Features • 40V/190A, RDS (ON) =1.8mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistance

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RU4099 N-Channel Advanced Power MOSFET Features Pin Description · 40V/200A RDS (ON)=2.8 mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged

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RU40190S N-Channel Advanced Power MOSFET MOSFET Features • 40V/190A, RDS (ON) =2.5mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resi

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RU40L10H P-Channel Advanced Power MOSFET MOSFET Features • -40V/-9.5A, RDS (ON) =19mΩ (Typ.) @ VGS=-10V RDS (ON) =30mΩ (Typ.) @ VGS=-4.5V • Super Hig

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RU4D-RU4DS High Efficiency Rectifiers VOLTAGE RANGE: 1300 V CURRENT: 1.5,2.5 A Features Low cost Diffus ed junction Low leakage Low forward voltage d

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