S-1313 Datasheet | Specifications & PDF Download

Product Information ECN 1313 ECN 1325 ERN 1321 ERN 1387 Rotary Encoders with Plane-Surface Coupling for Elevator Servo Drive Control October 2013 E

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MITSUMI I2C BUS Control 5-Input 2-Output AV Switch MM1313 I2C BUS Control 5-Input 2-Output AV Switch Monolithic IC MM1313 Outline This IC is a 5-in

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GS81313LT18/36GK-833/714/625 260-Pin BGA Com & Ind Temp HSTL I/O 144Mb SigmaDDR-IIIe™ Burst of 2 ECCRAM™ Up to 833 MHz 1.25V ~ 1.3V VDD 1.2V ~ 1.3V

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MAX71313L/MAX71314L ZON M1L/M1 Single-Phase Electricity Meter SoC General Description The ZON™ M1L (MAX71313L) and M1 (MAX71314L) electricity meter

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2SK1313(L)(S), 2SK1314(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switch

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GS81313LD18/36GK-833/714/625 260-Pin BGA Com & Ind Temp HSTL I/O 144Mb SigmaQuad-IIIe™ Burst of 4 ECCRAM™ Up to 833 MHz 1.25V ~ 1.3V VDD 1.2V ~ 1.3

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MX1313AS Synchronous Rectifier for Flyback DCM and QR Converter GENERAL DESCRIPITION FEATURES MX1313AS is a secondary side switch IC designed for

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www.DataSheet4U.com Steckverbindersystem Connector system RFK 2 Technische Daten / Technical Data Technische Daten Technical data WtB WtB (Seite 8

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Order this document by MC13135/D FM Communications Receivers The MC13135/MC13136 are the second generation of single chip, dual conversion FM communi

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FUJITSU SEMICONDUCTOR DATA SHEET 32-bit Microcontroller CMOS FR60 MB91313 Series DS07-16706-1E MB91F313 ■ DESCRIPTION The FR family* is a line of mi

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AOSP21313C 30V P-Channel MOSFET General Description • Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Fr

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GS81313LT18/36GK-833/714/625 260-Pin BGA Com & Ind Temp HSTL I/O 144Mb SigmaDDR-IIIe™ Burst of 2 ECCRAM™ Up to 833 MHz 1.25V ~ 1.3V VDD 1.2V ~ 1.3V

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LT1313 Dual PCMCIA VPP Driver/Regulator FEATURES s s s s s s s s s s DESCRIPTION The LT ® 1313 is a member of Linear Technology Corporation’s PCMCIA

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2SK1313(L)(S), 2SK1314(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switch

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isc Silicon NPN Power Transistor 2SD1313 DESCRIPTION ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min) ·High

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GS81313LQ18/36GK-800/714/600 260-Pin BGA Com & Ind Temp HSTL I/O 144Mb SigmaQuad-IIIe™ Burst of 2 ECCRAM™ Up to 800 MHz 1.25V ~ 1.3V VDD 1.2V ~ 1.3

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Order this document by MC13135/D FM Communications Receivers The MC13135/MC13136 are the second generation of single chip, dual conversion FM communi

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ELECTRONIC FILM CAPACITORS, INC. Reidville Industrial Park * 41 Interstate Lane WATERBURY, CONNECTICUT 06705 PHONE (203) 755-5629 FAX (203) 755-0659

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