S-8206A Datasheet | Specifications & PDF Download

RT8206A/B High Efficiency, Main Power Supply Controllers for Notebook Computers General Description The RT8206A/B dual step-down, Switch Mode Power

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LGB8206ATI & LGB8206ARI 350 V, 20 A N-Channel Ignition IGBT Agency Approvals Environmental Approvals Pinout Diagram Datasheet Product Summary Chara

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NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuit

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S-8206A Series www.ablic.com © ABLIC Inc., 2015-2020 BATTERY PROTECTION IC FOR 1-CELL PACK (SECONDARY PROTECTION) Rev.1.5_00 The S-8206A Series is

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S-8206A Series www.sii-ic.com © Seiko Instruments Inc., 2015 BATTERY PROTECTION IC FOR 1-CELL PACK (SECONDARY PROTECTION) Rev.1.1_00 The S-8206A Se

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LGB8206ATI & LGB8206ARI 350 V, 20 A N-Channel Ignition IGBT Agency Approvals Environmental Approvals Pinout Diagram Datasheet Product Summary Chara

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SM8206ACT ® Dual N-Channel Enhancement Mode MOSFET Features • 20V/6A, R= DS(ON) 26mΩ(max.) @ V= GS 4V R= DS(ON) 36mΩ(max.) @ V= GS 2.5V

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SM8206AO Dual N-Channel Enhancement Mode MOSFET Features · 20V/6A, RDS(ON)= 20mW(typ.) @ VGS= 10V RDS(ON)= 23mW(typ.) @ VGS= 4.5V RDS(ON)= 27mW(typ.

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