LESHAN RADIO COMPANY, LTD. N-Channel 1.8-V (G-S) .
LSI1012LT1G - N-Channel 1.8-V (G-S) MOSFET
LESHAN RADIO COMPANY, LTD. N-Channel 1.8-V (G-S) MOSFET FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Si.S-LSI1012LT1G - N-Channel 1.8-V (G-S) MOSFET
LESHAN RADIO COMPANY, LTD. N-Channel 1.8-V (G-S) MOSFET FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Si.