.
HongyeX
EBMS201209 - MULTILAYER CHIP SUPPRESSORS
MATERIAL CHARACTERISTICS EBMS-A Effective Range of Noise Suppression 1 MHz 10MHz 100MHz 1GHz EBMS-B EBMS-K EBMS-H Applications General Sign.
Silikron Semiconductor
SSTS20120 - Schottky Barrier Rectifier
SSTS20120/SSTS20120F Main Product Characteristics: IF VRRM Tj(ma.
Silikron Semiconductor
SSTS20120F - Schottky Barrier Rectifier
SSTS20120/SSTS20120F Main Product Characteristics: IF VRRM Tj(ma.
STMicroelectronics
STPS20120CT - power Schottky rectifier
$ $ . . . $ $ . 72$%QDUURZOHDGV . ,ð3$. $ $. $ $ . 72$% . . $ $ '3$. $ $ STPS20120C Power Schottky rectifier Datas.
STMicroelectronics
STPS20120C - power Schottky rectifier
$ $ . . . $ $ . 72$%QDUURZOHDGV . ,ð3$. $ $. $ $ . 72$% . . $ $ '3$. $ $ STPS20120C Power Schottky rectifier Datas.
STMicroelectronics
STPS20120D - POWER SCHOTTKY RECTIFIER
® STPS20120D POWER SCHOTTKY RECTIFIER www.datasheet4u.com Table 1: Main Product Characteristics IF(AV) VRRM Tj (max) VF (typ) FEATURES AND BENEFITS.
Max Echo
EBMS201209 - Multilayer Ferrite Chip Bead
Multilayer Ferrite Chip Bead (for Signal Line) （） EBMS201209 (0805) TYPE EQUIVALENT CIRCUIT DIAGRAM Electrical Characteristics Part Number Impe.
STMicroelectronics
STPS20120CR - power Schottky rectifier
$ $ . . . $ $ . 72$%QDUURZOHDGV . ,ð3$. $ $. $ $ . 72$% . . $ $ '3$. $ $ STPS20120C Power Schottky rectifier Datas.
INCHANGE
STPS20120CT - Schottky Barrier Rectifier
Power Schottky Rectifier INCHANGE Semiconductor STPS20120CT FEATURES ·Low Power Loss,high Efficiency ·High Surge Capability,High Current Capability .
STMicroelectronics
STPS20120CTN - power Schottky rectifier
$ $ . . . $ $ . 72$%QDUURZOHDGV . ,ð3$. $ $. $ $ . 72$% . . $ $ '3$. $ $ STPS20120C Power Schottky rectifier Datas.
