S35 Datasheet | Specifications & PDF Download

Dual Operational Amplifiers JAN. 2010 Product Description The GS358 consists of two independent, high gain, internally frequency compensated operatio

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ADVANCED INFORMATION AS358/358A/358B LOW POWER DUAL OPERATIONAL AMPLIFIERS Description Pin Assignments The AS358/358A/358B consists of two indepen

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AN515 AND AN520 MS35206 AND MS35207 NON STRUCTURAL PAN HEAD PHILLIPS® DRIVE SCREWS AN515 - COURSE THREAD AN520 - FINE THREAD AN515 REPLACED BY MS3520

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PN: DS35X1GAXXX DS35X1GAXXX 3.3V/1.8V x1/x2/x4 1G-bit SPI NAND FLASH Rev.03 (Feb 20, 2020) 1 PN: DS35X1GAXXX Catalog Revision History

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MDS35-4 THRU MDS35-16 Three Phase Bridge Rectifiers Features ● UL recognition, file #E230084 ● Low thermal resistance ● Glass passivated chip junction

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NotNeRewcDoemsimgennsded for 1SS356 Band Switching Diodes 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline VR 35 V Ct 1.2 pF rF 0.9 Ω 　 ●F

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MDS35-4 THRU MDS35-16 Three Phase Bridge Rectifiers Features ● UL recognition, file #E230084 ● Low thermal resistance ● Glass passivated chip junction

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Dosilicon Confidential PN: DS35X1GBXXX DS35X1GBXXX 3.3V/1.8V x1/x2/x4 1G-bit SPI NAND FLASH Rev.05 (Aug. 05. 2022) 1 Dosilicon Confidential PN: D

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CAS350M12BM3, 5 CAS350M12BM3T 1200 V, 350 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • Ultra Low

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GS321/358/324 1MHZ CMOS Rail-to-Rail IO Opamp with RF Filter Features • Single-Supply Operation from +2.1V ~ +5.5V • Rail-to-Rail Input / Output • G

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Si PIN photodiodes S3590 series Large area Si PIN photodiodes Features Sensitivity suitable for BGO and CsI(Tl) scintillators: S3590-08/-09 Sensitivi

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MOSFET – N-Channel, POWERTRENCH), 80 V FDS3580 General Description This N−Channel MOSFET has been designed specifically to improve the overall effici

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WAS350M12BM3, 5 WAS350M12BM3T 1200 V, 350 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • High H

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MDS35-4 THRU MDS35-16 Three Phase Bridge Rectifiers Features ● UL recognition, file #E230084 ● Low thermal resistance ● Glass passivated chip junction

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Dosilicon Confidential PN: DS35X1GBXXX DS35X1GBXXX 3.3V/1.8V x1/x2/x4 1G-bit SPI NAND FLASH Rev.05 (Aug. 05. 2022) 1 Dosilicon Confidential PN: D

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MDS35-4 THRU MDS35-16 Three Phase Bridge Rectifiers Features ● UL recognition, file #E230084 ● Low thermal resistance ● Glass passivated chip junction

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MDS35-4 THRU MDS35-16 Three Phase Bridge Rectifiers Features ● UL recognition, file #E230084 ● Low thermal resistance ● Glass passivated chip junction

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Features  P-Channel，-5V Logic Level Control  Low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  Pb-free lead plating; RoHS

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ADVANCED INFORMATION AS358/358A/358B LOW POWER DUAL OPERATIONAL AMPLIFIERS Description Pin Assignments The AS358/358A/358B consists of two indepen

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MDS35-4 THRU MDS35-16 Three Phase Bridge Rectifiers Features ● UL recognition, file #E230084 ● Low thermal resistance ● Glass passivated chip junction

(37 views)