S36 Datasheet | Specifications & PDF Download

IPA70R360P7S MOSFET 700V CoolMOSª P7 Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the su

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AONS36344 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS

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ERS320P thru ERS360P Schottky Barrier Rectifiers SOD-123F Features ‧High Current Capability ‧Extremely Low Thermal Resistance ‧For Surface Mount App

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SM15S Series Surface Mount Transient Voltage Suppressors Features • RoHS compliant junction passivation • SM15SxxA available in Uni-directional polari

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SM15S Series Surface Mount Transient Voltage Suppressors Features • RoHS compliant junction passivation • SM15SxxA available in Uni-directional polari

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HP8S36 　　30V Nch+Nch Middle Power MOSFET Symbol VDSS RDS(on)(Max.) ID PD Tr1:Nch Tr2:Nch 30V 30V 8.8mΩ 2.4mΩ ±27A ±80A 22W 29W lFeatures 1) Low on

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Transient Voltage Suppressor Product specification TSM5S Series Features  Ideally suited for load dump protection  Plastic package has Underwriter

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UMW FDS3672 100V N-ChanneI MOSFET 1.Features ID=7.5A RDS(ON)=23mΩ(VGS=10V) Qg(tot) = 28nC(Typ.),VGS=10V Low Miller Charge 2.Applications DC/DC conver

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MDS3604– Single P-Channel Trench MOSFET, -30V, -12.1A, 10.0mΩ MDS3604 Single P-Channel Trench MOSFET, -30V, -12.1A, 10.0mΩ General Description The M

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BF 160 17.78+-0.13 OCXO-S36 25.4+-0.25 36.1max 2 0.8+-0.1 27.2max 1. Pin-Out 1. Pulling voltage input, Potentiometer 2. Reference-voltage output,

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STR-KS360/KS360S QQ 376315150 892498299 http://www.xiaoyu163.com SERVICE MANUAL Ver. 1.0 2009.03 US Model Canadian Model STR-KS360/KS360S AEP Mode

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Features  Enhancement mode  Low RDS(on) to minimize conduction losses  VitoMOS® Ⅱ Technolog  100% Avalanche Tested,100% Rg Tested VS3614GE 30V/31

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested 

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Features  Guard-Ring Die Construction for Transient Protection  Low Power Loss, High Efficiency  Low Reverse Leakage Current  For Use in High-Freq

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54LS365/74LS365 LSTTL （、） ： tpd=9.5ns Pd=70mW 1 L L H × ×= Z= 2 L L × H A L H × × Y L H Z Z 74Ⅱ Vcc VIH VIL IOH IOL TA -40 4.75 2

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS3646/D Switching Transistor NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MPS3646 Motor

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Surface Mount Schottky Power Rectifier MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G, NRVBS360BNT3 This device employs the Schottky Barrier prin

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Passive Infrared (PIR) Detector Controller NCS36000 The NCS36000 is a fully integrated mixed−signal CMOS device designed for low−cost passive infrared

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