S36 Datasheet | Specifications & PDF Download

IPA70R360P7S MOSFET 700V CoolMOSª P7 Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the su

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AONS36344 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS

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HP8S36 　　30V Nch+Nch Middle Power MOSFET Symbol VDSS RDS(on)(Max.) ID PD Tr1:Nch Tr2:Nch 30V 30V 8.8mΩ 2.4mΩ ±27A ±80A 22W 29W lFeatures 1) Low on

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® WON-TOP ELECTRONICS SS32 – SS310 3.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

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LMS3655-Q1, LMS3635-Q1 SNAS714C – NOVEMBER 2016 – REVISED AUGUST 2021 LMS3635-Q1 3.5-A, LMS3655-Q1 5.5-A, 36-V Synchronous, 400-kHz Step-Down Converte

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AONS36316 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS

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LMS3655-Q1, LMS3635-Q1 SNAS714C – NOVEMBER 2016 – REVISED AUGUST 2021 LMS3635-Q1 3.5-A, LMS3655-Q1 5.5-A, 36-V Synchronous, 400-kHz Step-Down Converte

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested 

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SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD SM8S10~~SM8S40A Surface Mount Transient Voltage Suppressors Features z Surface mount package. z Excellent c

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www.vishay.com SM8S10CA thru SM8S85CA Vishay General Semiconductor Surface-Mount PAR® Transient Voltage Suppressors High Temperature Stability and H

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AONS36314 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS

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ALD6S Series SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DO-218 Package 0.628 (16.0) 0.592 (15.0) 0.539 (13.7) 0.524 (13.3) 0.413 (10.5) 0.342 (8.7) 0

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ALD6S Series SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DO-218 Package 0.628 (16.0) 0.592 (15.0) 0.539 (13.7) 0.524 (13.3) 0.413 (10.5) 0.342 (8.7) 0

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VS3606AP-VB VS3606AP-VB Datasheet N-Channel 30 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0018 at VGS = 10 V 0.0025 a

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STR-KS360/KS360S QQ 376315150 892498299 http://www.xiaoyu163.com SERVICE MANUAL Ver. 1.0 2009.03 US Model Canadian Model STR-KS360/KS360S AEP Mode

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FDMS3669S PowerTrench® Power Stage FDMS3669S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 10 mΩ a

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MDS3604– Single P-Channel Trench MOSFET, -30V, -12.1A, 10.0mΩ MDS3604 Single P-Channel Trench MOSFET, -30V, -12.1A, 10.0mΩ General Description The M

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VS3622AD-VB VS3622AD-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.005 at VGS = 10 V 0.006 at

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VS3622DP-VB VS3622DP-VB Datasheet Dual N-Channel 30V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0034 at VGS = 10 V 30 0.00

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