S39 Datasheet | Specifications & PDF Download

30V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan

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30V P-Channel MOSFETs PDS3907 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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30V P-Channel MOSFETs PDS3911 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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LOW POWER LOW OFFSET VOLTAGE DUAL COMPARATORS General Description Features Data Sheet AS393/393A The AS393/393A consist of two independent precisi

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MSS39-xxx-x Series P-Type Silicon Schottky Diodes Features  Very Low 1/f Noise  Detector Applications up to 40 GHz  Chip Beam Lead and Packaged Dev

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NPIS Shielded Power Inductors FEATURES • SHIELDED POWER INDUCTOR • SMALL SIZE WITH CURRENT RATINGS TO 5.2 AMPS) • SURFACE MOUNTABLE CONSTRUCTION • HIG

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NPIS Shielded Power Inductors FEATURES • SHIELDED POWER INDUCTOR • SMALL SIZE WITH CURRENT RATINGS TO 5.2 AMPS) • SURFACE MOUNTABLE CONSTRUCTION • HIG

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30V N-Channel MOSFETs PDS3910 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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NPIS Shielded Power Inductors FEATURES • SHIELDED POWER INDUCTOR • SMALL SIZE WITH CURRENT RATINGS TO 5.2 AMPS) • SURFACE MOUNTABLE CONSTRUCTION • HIG

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MSS39-xxx-x Series P-Type Silicon Schottky Diodes Features  Very Low 1/f Noise  Detector Applications up to 40 GHz  Chip Beam Lead and Packaged Dev

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30V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan

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MS39P93 P-Channel 30-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on

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MSS39-xxx-x Series P-Type Silicon Schottky Diodes Features  Very Low 1/f Noise  Detector Applications up to 40 GHz  Chip Beam Lead and Packaged Dev

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30V P-Channel MOSFETs PDS3905 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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30V N-Channel MOSFETs PDS3908 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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NPIS Shielded Power Inductors FEATURES • SHIELDED POWER INDUCTOR • SMALL SIZE WITH CURRENT RATINGS TO 5.2 AMPS) • SURFACE MOUNTABLE CONSTRUCTION • HIG

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MS3988/MS3988N Function and Feature The MS3988/MS3988N is a quad DMOS full-bridge driver capable of driving up to two stepper motors or four dc mot

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FEATURES LOW DRIFT IΔVGS1-2/ΔT│=5µV/°C max. LOW LEAKAGE IG=20pA TYP. LOW NOISE en=10Nv/√Hz TYP. ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless othe

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30V N-Channel MOSFETs PDS3904 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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