PDS3904 Datasheet, Mosfets, Potens semiconductor

PDS3904 Features

  • Mosfets
  • 30V, 30A, RDS(ON) =4.2mΩ@VGS = 10V
  • Improved dv/dt capability
  • Fast switching
  • 100% EAS Guaranteed
  • Green Device Available Applications

PDF File Details

Part number:

PDS3904

Manufacturer:

Potens semiconductor

File Size:

577.69kb

Download:

📄 Datasheet

Description:

N-channel mosfets. These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been e

Datasheet Preview: PDS3904 📥 Download PDF (577.69kb)
Page 2 of PDS3904 Page 3 of PDS3904

PDS3904 Application

  • Applications SOP8 Pin Configuration D DD D G SS S G D S BVDSS 30V RDSON 4.2mΩ ID 30A Features
  • 30V, 30A, RDS(ON) =4.2mΩ@VGS = 10V

TAGS

PDS3904
N-Channel
MOSFETs
Potens semiconductor

📁 Related Datasheet

PDS3903 - P-Channel MOSFETs (Potens semiconductor)
30V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan.

PDS3905 - P-Channel MOSFETs (Potens semiconductor)
30V P-Channel MOSFETs PDS3905 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS3906 - 30V N-Channel MOSFETs (Potens semiconductor)
30V N-Channel MOSFETs PDS3906 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS3907 - P-Channel MOSFETs (Potens semiconductor)
30V P-Channel MOSFETs PDS3907 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS3908 - N-Channel MOSFETs (Potens semiconductor)
30V N-Channel MOSFETs PDS3908 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS3910 - N-Channel MOSFETs (Potens semiconductor)
30V N-Channel MOSFETs PDS3910 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS3911 - P-Channel MOSFETs (Potens semiconductor)
30V P-Channel MOSFETs PDS3911 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS3912 - N-Channel MOSFETs (Potens semiconductor)
30V N-Channel MOSFETs PDS3912 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS3959 - P-Channel MOSFETs (Potens semiconductor)
30V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan.

PDS3100 - 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
Green PDS3100 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER PowerDI5 Features • Guard Ring Die Construction for Transient Protection • Low Power Loss,.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts