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PDS3906 30V N-Channel MOSFETs

PDS3906 Description

30V N-Channel MOSFETs PDS3906 General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDS3906 Features

* 30V, 20A, RDS(ON)=6mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching

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Datasheet Details

Part number
PDS3906
Manufacturer
Potens semiconductor
File Size
675.30 KB
Datasheet
PDS3906-Potenssemiconductor.pdf
Description
30V N-Channel MOSFETs

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30V N-Channel MOSFETs Potens semiconductor
Potens semiconductor PDS3906-like datasheet