PDS3906 Datasheet, Mosfets, Potens semiconductor

PDS3906 Features

• Mosfets
• 30V, 20A, RDS(ON)=6mΩ@VGS = 10V
• Improved dv/dt capability
• Fast switching
• Green Device Available Applications
• Notebook
• Load Sw

PDF File Details

Part number:

PDS3906

Manufacturer:

Potens semiconductor

File Size:

675.30kb

Download:

📄 Datasheet

Description:

30v n-channel mosfets. These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been e

PDS3906 Application

• Applications SOP8 Pin Configuration D DD D SS SG G D S BVDSS 30V RDSON 6m ID 20A Features
• 30V, 20A, RDS(ON)=6mΩ@VGS = 10V
<

TAGS

PDS3906

Potens semiconductor

📁 Related Datasheet

PDS3903 - P-Channel MOSFETs (Potens semiconductor)
30V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan.

PDS3904 - N-Channel MOSFETs (Potens semiconductor)
30V N-Channel MOSFETs PDS3904 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS3905 - P-Channel MOSFETs (Potens semiconductor)
30V P-Channel MOSFETs PDS3905 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS3907 - P-Channel MOSFETs (Potens semiconductor)
30V P-Channel MOSFETs PDS3907 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS3908 - N-Channel MOSFETs (Potens semiconductor)
30V N-Channel MOSFETs PDS3908 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS3910 - N-Channel MOSFETs (Potens semiconductor)
30V N-Channel MOSFETs PDS3910 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS3911 - P-Channel MOSFETs (Potens semiconductor)
30V P-Channel MOSFETs PDS3911 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS3912 - N-Channel MOSFETs (Potens semiconductor)
30V N-Channel MOSFETs PDS3912 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS3959 - P-Channel MOSFETs (Potens semiconductor)
30V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan.

PDS3100 - 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
Green PDS3100 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER PowerDI5 Features • Guard Ring Die Construction for Transient Protection • Low Power Loss,.