PDS3906 Datasheet - Potens semiconductor

PDS3906 30V N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDS3906 Features

* 30V, 20A, RDS(ON)=6mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* Notebook

* Load Switch

* LED applications

* Hand-Held Device Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG T

PDS3906 Datasheet (675.30 KB)

PDS3906 Datasheet Preview — Preview of PDS3906 PDF

Datasheet Details

Part number:

PDS3906

Manufacturer:

Potens semiconductor

File Size:

675.30 KB

Description:

30v n-channel mosfets.

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PDS3906 30V N-Channel MOSFETs Potens semiconductor

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