PDS3906 Datasheet (Potens semiconductor)

PDS3906, 30V N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

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PDS3906 Features

* 30V, 20A, RDS(ON)=6mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* Notebook

* Load Switch

* LED applications

* Hand-Held Device Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG T