PDS3910 Datasheet, Mosfets, Potens semiconductor

PDS3910 Features

• Mosfets
• 30V,10A, RDS(ON) =12mΩ @VGS = 10V
• Improved dv/dt capability
• Fast switching
• 100% EAS Guaranteed
• Green Device Available Applications

PDF File Details

Part number:

PDS3910

Manufacturer:

Potens semiconductor

File Size:

564.21kb

Download:

📄 Datasheet

Description:

N-channel mosfets. These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been e

PDS3910 Application

• Applications SOP8 Pin Configuration D DD D G SS S G D S BVDSS 30V RDSON 12mΩ ID 10A Features
• 30V,10A, RDS(ON) =12mΩ @VGS = 10V

TAGS

PDS3910

Potens semiconductor

📁 Related Datasheet

PDS3911 - P-Channel MOSFETs (Potens semiconductor)
30V P-Channel MOSFETs PDS3911 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS3912 - N-Channel MOSFETs (Potens semiconductor)
30V N-Channel MOSFETs PDS3912 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS3903 - P-Channel MOSFETs (Potens semiconductor)
30V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan.

PDS3904 - N-Channel MOSFETs (Potens semiconductor)
30V N-Channel MOSFETs PDS3904 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS3905 - P-Channel MOSFETs (Potens semiconductor)
30V P-Channel MOSFETs PDS3905 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS3906 - 30V N-Channel MOSFETs (Potens semiconductor)
30V N-Channel MOSFETs PDS3906 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS3907 - P-Channel MOSFETs (Potens semiconductor)
30V P-Channel MOSFETs PDS3907 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS3908 - N-Channel MOSFETs (Potens semiconductor)
30V N-Channel MOSFETs PDS3908 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS3959 - P-Channel MOSFETs (Potens semiconductor)
30V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan.

PDS3100 - 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
Green PDS3100 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER PowerDI5 Features • Guard Ring Die Construction for Transient Protection • Low Power Loss,.