S4M Datasheet | Specifications & PDF Download

LITE-ON SEMICONDUCTOR Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors FEATURES Glass-Passivated Surface for Reliability and

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SHINDENGEN Schottky Rectifiers (SBD) Single D5S4M 40V 5A FEATURES OUTLINE DIMENSIONS Case : ITO-220 Unit : mm •œ Tj150•Ž •œ PRRSM avalanche guarant

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www.DataSheet4U.com DATA SHEET THYRISTORS 2S2M, 2S4M 2 A HIGH-SPEED SWITCHING SCR The 2S2M and 2S4M are P-gate fully diffused mold SCRs with an av

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January 7, 1998 RECTIFIER, up to 1kV, 2A, 2µs 1N5614 1N5616 1N5618 1N5620 1N5622 S2M S4M S6M S8M S0M TEL:805-498-2111 FAX:805-498-3804 WEB:http://

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www.DataSheet4U.com 128Mx72 bits Low Profile Registered DDR SDRAM DIMM HYMD212G726A(L)S4M-M/K/H/L DESCRIPTION Preliminary Hynix HYMD212G726A(L)S4M-

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D2S4M Schottky Barrier Diodes 40V, 2A Feature ・High Recovery Speed ・Low VF ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): AX078 Equivalen

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Green SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS FEATURES • Glass Passivated Junctions for Reliability and Uniformity •

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Production specification Silicon Bridge Rectifiers FEATURES z Rating to 1000V PRV z Surge overload rating to 120 Amperes peak z Reliable low cost con

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www.DataSheet4U.com 128Mx72 bits Low Profile Registered DDR SDRAM DIMM HYMD212G726A(L)S4M-M/K/H/L DESCRIPTION Preliminary Hynix HYMD212G726A(L)S4M-

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S4A - S4M Taiwan Semiconductor 4A, 50V - 1000V Surface Mount Rectifier FEATURES ● Glass passivated chip junction ● Ideal for automated placement ● L

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D3S4M Schottky Barrier Diodes 40V, 3A Feature ・High Recovery Speed ・Low VF ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): AX14 Equivalent

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SG5S4M Schottky Barrier Diodes 40V, 5A Feature ・High Recovery Speed ・Low VF ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): FTO-220G Packag

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SHINDENGEN Schottky Rectifiers (SBD) Single S5S4M 40V 5A OUTLINE DIMENSIONS Case :: TO-220 TO-220 Case Unit : mm RATINGS •œAbsolute Maximum Ratings

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www.DataSheet4U.com 128Mx72 bits Low Profile Registered DDR SDRAM DIMM HYMD212G726A(L)S4M-M/K/H/L DESCRIPTION Preliminary Hynix HYMD212G726A(L)S4M-

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www.DataSheet4U.com 128Mx72 bits Low Profile Registered DDR SDRAM DIMM HYMD212G726A(L)S4M-M/K/H/L DESCRIPTION Preliminary Hynix HYMD212G726A(L)S4M-

(7 views)

www.DataSheet4U.com 128Mx72 bits Low Profile Registered DDR SDRAM DIMM HYMD212G726A(L)S4M-M/K/H/L DESCRIPTION Preliminary Hynix HYMD212G726A(L)S4M-

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DE3S4M Schottky Barrier Diodes 40V, 3A Feature ・SMD ・High Recovery Speed ・Low VF ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): E-pack Pac

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DE5S4M Schottky Barrier Diodes 40V, 5A Feature ・SMD ・High Recovery Speed ・Low VF ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): E-pack Pac

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www.DataSheet4U.com NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com NT5DS4M32EG Ad

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www.DataSheet4U.com 128Mx72 bits Low Profile Registered DDR SDRAM DIMM HYMD212G726A(L)S4M-M/K/H/L DESCRIPTION Preliminary Hynix HYMD212G726A(L)S4M-

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