S6M Datasheet | Specifications & PDF Download

WZ700071A (1/4) MITSUBISHI (OPTICAL DEVICES) ES Product FU-60RDF-S6M1x 1.55 µm CWDM DFB-LD WITH LC RECEPTACLE FOR LONG HAUL APPLICATIONS DESCRIPTIO

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ESD Protection Diodes Silicon Epitaxial Planar DF2S6M4SL DF2S6M4SL 1. General The DF2S6M4SL is a TVS diode (ESD protection diode) protects semicondu

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DE3S6M Schottky Barrier Diodes 60V, 3A Feature ・SMD ・High Recovery Speed ・Low VF ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): E-pack Pac

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SHINDENGEN Schottky Rectifiers (SBD) Single D5S6M 60V 5A FEATURES OUTLINE DIMENSIONS Case : ITO-220 Unit : mm •œ Tj150•Ž •œ PRRSM avalanche guarant

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QS6M3 Transistors Small switching QS6M3 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT6).

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STPS6M100SF Datasheet 100 V power Schottky rectifier Product status link STPS6M100SF Product summary Symbol Value IF(AV) 6A VRRM 100 V Tj (m

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D2S6M Schottky Barrier Diodes 60V, 2A Feature ・High Recovery Speed ・Low VF ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): AX078 Equivalen

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204pin DDR3 SDRAM SODIMM DDR3 SDRAM Unbuffered SODIMMs Based on 4Gb M-die HMT425S6MFR6C HMT451S6MFR8C HMT41GS6MFR8C *SK hynix reserves the right to

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ALUMINUM  ELECTROLYTIC  CAPACITORS UUE Chip Type,  Vibration Resistance Chip type with load life of 2000 to 5000 hours at 125°C. Suited for automobil

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D3S6M Schottky Barrier Diodes 60V, 3A Feature ・High Recovery Speed ・Low VF ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): AX14 Equivalent

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DE5S6M Schottky Barrier Diodes 60V, 5A Feature ・SMD ・High Recovery Speed ・Low VF ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): E-pack Pac

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204pin DDR3 SDRAM SODIMM DDR3 SDRAM Unbuffered SODIMM Based on 2Gb M version HMT451S6MMP(R)8C ** Contents are subject to change without prior notice

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204pin DDR3L SDRAM SODIMM DDR3L SDRAM Unbuffered SODIMMs Based on 4Gb M-die HMT425S6MFR6A HMT451S6MFR8A HMT41GS6MFR8A * SK hynix reserves the right

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204pin DDR3 SDRAM SODIMM DDR3 SDRAM Unbuffered SODIMMs Based on 4Gb M-die HMT425S6MFR6C HMT451S6MFR8C HMT41GS6MFR8C *SK hynix reserves the right to

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Transistors US6M1 4V+2.5V Drive Nch+Nch MOSFET US6M1 0.2Max. zStructure Silicon N-channel / P-channel MOSFET zFeatures 1) Low on-resistance. 2) B

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204pin DDR3 SDRAM SODIMM DDR3 SDRAM Unbuffered SODIMMs Based on 4Gb M-die HMT425S6MFR6C HMT451S6MFR8C HMT41GS6MFR8C *SK hynix reserves the right to

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Transistors 2.5V Drive Nch+Pch MOSFET US6M2 US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions (Unit : mm) TUMT6 0.2

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ALUMINUM  ELECTROLYTIC  CAPACITORS UUE Chip Type,  Vibration Resistance Chip type with load life of 2000 to 5000 hours at 125°C. Suited for automobil

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www.fairchildsemi.com FS6M12653RTC Fairchild Power Switch(FPS) Features • • • • • • • • • • Fixed Frequency Internal Burst Mode Controller for Stand

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SG5S6M Schottky Barrier Diodes 60V, 5A Feature ・High Recovery Speed ・Low VF ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): FTO-220G Packag

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