MCC Features • • • • • .
NS8BT - Glass Passivated General Purpose
Certificate TH97/10561QM Certificate TW00/17276EM NS8AT - NS8MT PRV : 50 - 1000 Volts Io : 8.0 Ampere FEATURES : * High current capability * High su.M6MGT331S8BKT - CMOS SRAM
www.DataSheet4U.com Preliminary Notice: This is not a final specification. Some parametric limits are subject to change. Renesas LSIs M6MGB/T331S8B.ATSAM4LS8B - ATSAM ARM-based Flash MCU
Summary Atmel's SAM4L series is a member of a family of Flash microcontrollers based on the high performance 32-bit ARM Cortex-M4 RISC processor runni.FES8BT - Ultrafast Plastic Rectifier
www.vishay.com FES8xT, FESF8xT, FESB8xT Vishay General Semiconductor Ultrafast Plastic Rectifier TO-220AC ITO-220AC FES8xT PIN 1 PIN 2 2 1 CASE.FES8BT - FAST EFFICIENT PLASTIC RECTIFIER
FES8AT THRU FES8JT FAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 50 to 600 Volts TO-220AC 0.185 (4.70) 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.1.SAM4S8B - SMART ARM-based Flash MCU
SAM4S Series Atmel | SMART ARM-based Flash MCU DATASHEET Description The Atmel® | SMART SAM4S series is a member of a family of Flash microcontrollers.NS8BT - GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER
NS8AT THRU NS8MT GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER Reverse Voltage - 50 to 1000 Volts TO-220AC 0.185 (4.70) 0.415 (10.54) MAX. 0.370 .NS8BT - Glass Passivated General Purpose Plastic Rectifier
www.vishay.com NS8xT, NSF8xT, NSB8xT Vishay General Semiconductor Glass Passivated General Purpose Plastic Rectifier TO-220AC ITO-220AC NS8xT PIN.IRGS8B60K - INSULATED GATE BIPOLAR TRANSISTOR
PD - 94545C INSULATED GATE BIPOLAR TRANSISTOR Features • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square .ES8B - 8.0 AMPS. Surface Mount Super Fast Rectifiers
ES8A thru ES8J ® Features Glass passivated junction chip For surface mounted application Low profile package Built-in strain relief Ideal for automat.FES8BT - 8A Fast Efficient Rectifiers
8A Fast Efficient Rectifiers FES8AT – FES8JT 8A Fast Efficient Rectifiers Features • Glass passivated chip junction • Super fast recovery times, high.FES8BT - Ultrafast Plastic Rectifiers
FES8AT - FES8JT PRV : 50 - 600 Volts Io : 8 Ampere FEATURES : * High current capability * High surge current capability * Low leakage, high voltage * .FES8BT-G - 8A Super Fast Glass Passivated Rectifier
SENSITRON T-G T-G SEMICONDUCTOR 4827 - Green Products .S8B - 8 Amp Silicon Rectifier
MCC Features • • • • • omponents 21201 Itasca Street Chatsworth # $ % # S8A THRU S.TC58NVG1S8BFT00 - (TC58NVG1S3BFT00) 2 GBit CMOS NAND EPROM
w m INTEGRATED CIRCUIT SILICON GATE CMOS o TENTATIVE TOSHIBA MOS DIGITAL .c U × 16 BIT) CMOS NAND E2PROM 2 GBIT (256M × 8 BIT/128M 4 t DESCRIPTION e .M6MGT33BS8BWG-P - CMOS SRAM
www.DataSheet4U.com Preliminary Notice: This is not a final specification. Some parametric limits are subject to change. Renesas LSIs M6MGB/T33BS8B.M6MGB33BS8BWG-P - CMOS SRAM
www.DataSheet4U.com Preliminary Notice: This is not a final specification. Some parametric limits are subject to change. Renesas LSIs M6MGB/T33BS8B.M6MGT33BS8BWG - CMOS SRAM
www.DataSheet4U.com Preliminary Notice: This is not a final specification. Some parametric limits are subject to change. Renesas LSIs M6MGB/T33BS8B.M6MGB33BS8BWG - CMOS SRAM
www.DataSheet4U.com Preliminary Notice: This is not a final specification. Some parametric limits are subject to change. Renesas LSIs M6MGB/T33BS8B.M6MGB331S8BKT - CMOS SRAM
www.DataSheet4U.com Preliminary Notice: This is not a final specification. Some parametric limits are subject to change. Renesas LSIs M6MGB/T331S8B.