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M6MGT33BS8BWG - CMOS SRAM

Description

The M6MGB/T33BS8BWG is a Stacked Chip Scale Package The M6MGB/T33BS8BWG is suitable for a high performance cellular phone and a mobile PC that are required to be small (S-CSP) that contents 32M-bit Flash memory and 8M-bit mounting area, weight and small power dissipation.

Features

  • Access Time Flash SRAM 70ns (Max. ) 85ns (Max. ) F-VCC =VCC=2.7 ~ 3.0V Ta=-40 ~ 85 °C 66 pin S-CSP Ball pitch 0.80mm Outer-ball:Sn.
  • Ag-Cu Supply Voltage Ambient Temperature Package.

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Datasheet preview – M6MGT33BS8BWG

Datasheet Details

Part number M6MGT33BS8BWG
Manufacturer Renesas
File Size 97.69 KB
Description CMOS SRAM
Datasheet download datasheet M6MGT33BS8BWG Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com Preliminary Notice: This is not a final specification. Some parametric limits are subject to change. Renesas LSIs M6MGB/T33BS8BWG 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS FLASH MEMORY 8,388,608-BIT (524,288-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package) & Description The M6MGB/T33BS8BWG is a Stacked Chip Scale Package The M6MGB/T33BS8BWG is suitable for a high performance cellular phone and a mobile PC that are required to be small (S-CSP) that contents 32M-bit Flash memory and 8M-bit mounting area, weight and small power dissipation. SRAM in a 66-pin Stacked CSP for lead free use.
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