Ordering number : EN4436A Schottky Barrier Diode .
JMnic
52
B1020 - 2SB1020
JMnic Product Specification Silicon PNP Power Transistors 2SB1020 DESCRIPTION ¡¤ With TO-220Fa package ¡¤ High DC current gain ¡¤ Low saturation v.
SavantIC
48
B1342 - 2SB1342
www.DataSheet.co.kr SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1342 DESCRIPTION ·With TO-2.
LRC
44
D35SB100 - High Current Glass Passivated Molding Single-Phase Bridge Rectifier
D35SB10 Thru D35SB100 High Current Glass Passivated Molding Single-Phase Bridge Rectifier Reverse Voltage 100 to 1000V Forward Current 35 A FEATURES z.
Rohm
34
B1443 - 2SB1443
Power Transistor (−50V, −2A) 2SB1443 Features 1) Low saturation voltage. VCE (sat) = −0.35V (Max.) at IC / IB = −1A / 50mA. 2) Excellent DC current .
NEC
33
B1669 - 2SB1669
DATA SHEET SILICON POWER TRANSISTOR www.DataSheet4U.com 2SB1669 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power t.
Toshiba Semiconductor
30
B1640 - 2SB1640
2SB1640 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1640 Audio Frequency Power Amplifier Unit: mm • • • Low saturation voltage: VCE (sat) .
nexperia
30
1PS70SB15 - Dual Schottky barrier diode
1PS70SB15 Dual Schottky barrier diode 17 December 2012 Product data sheet 1. General description Dual Planar Schottky barrier diode in common cathod.
ETC
28
B1366 - KSB1366
KSB1366 KSB1366 LOW FREQUENCY POWER AMPLIFIER • Complement to KSD2012 1 TO-220F 2.Collector 3.Emitter 1.Base www.DataSheet4U.com PNP Epitaxial S.
BLUE ROCKET ELECTRONICS
27
2SB1132 - Silicon PNP transistor
2SB1132 Rev.D Nov.-2015 DATA SHEET / Descriptions SOT-89 PNP 。Silicon PNP transistor in a SOT-89 Plastic Package. / Features , 2SD1664 。 Low.
SavantIC
26
B1369 - 2SB1369
SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-220 package ·High collector power dissipation ·High cur.
NEC
26
B1261-Z - 2SB1261-Z
DATA SHEET SILICON POWER TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SB1261-Z is designed for Audio Frequency Amplifier a.
Toshiba Semiconductor
25
B1375 - 2SB1375
TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier 2SB1375 Unit: mm • Low saturation voltage: VCE (sat) = −.
Rohm
23
B1185 - 2SB1185
Transistors www.DataSheet4U.com Power Transistor (*60V, *3A) 2SB1184 / 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB .
SavantIC
23
2SB1560 - SILICON POWER TRANSISTOR
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Darlington Power Transistors 2SB1560 DESCRIPTION ·With TO-3PN package.
Kexin
23
B1184 - 2SB1184
SMD Type Power transistor 2SB1184 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). PNP silicon tran.
Rohm
22
B1568 - 2SB1568
Transistors Power Transistor (−80V, −4A) 2SB1568 2SB1568 z Features zExternal dimensions (Unit : mm) 1) Available in TO-220 FN package 2) Darling.
Inchange Semiconductor
22
B1217 - 2SB1217
INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SB1217 DESCRIPTION ·High Collector Current -IC= -3A ·Collector-Em.
NEC
22
B1453 - 2SB1453
DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can di.
LRC
21
D25SB100 - High Current Glass Passivated Molding Single-Phase Bridge Rectifier
LESHAN RADIO COMPANY LTD. D25SB10(RBV2502S) Thru D25SB100(RBV2507S) FEATURES Plastic Package has Underwriters Laboratory Flammability Classification.
Asemi
21
HD50SB100 - General Purpose Rectifiers
General Purpose Rectifiers HD50SB100 1000V 50A OUTLINE DIMENSIONS FEATURES Thin Single In-Line Package High current capacity with Small Package High.