Ordering number:EN2209C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1223/2SD1825 Driver Applications Applications · Suitable for use

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1223 DESCRIPTION ·With TO-220F package ·Compleme

Product Specification SPECIFICATION FOR APPROVAL LM315WR1 Liquid Crystal Display ( ) Preliminary Specification (● ) Final Specification Title 31.5

isc Silicon PNP Darlington Power Transistor 2SB1223 DESCRIPTION ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) ·Large Current Capabili

D35SB10 Thru D35SB100 High Current Glass Passivated Molding Single-Phase Bridge Rectifier Reverse Voltage 100 to 1000V Forward Current 35 A FEATURES z

DATA SHEET SILICON POWER TRANSISTOR www.DataSheet4U.com 2SB1669 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power t

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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Medium Power Transistor VOLTAGE 32 Volts APPLICATION * Power driver and Dc to DC convertor . 2SB1188PT

TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington) 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amp

Z ibo Seno Electronic Engineering Co., Ltd. SB1045L - SB10200L Features Schottky Barrier Chip Bypass Diodes for Solar Panels High Junction Tem

www.DataSheet.in SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1335 · DESCRIPTION ·With TO-22

www.DataSheet.co.kr SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1342 DESCRIPTION ·With TO-2

Transistors 2SB1434 Silicon PNP epitaxial planer type Unit: mm For low-frequency output amplification Complementary to 2SD2177 I Features • Low coll

HD60SB60 thru HD60SB120 60A,600V-1200V 60A,600V-1200V Single Phase Glass Passivated Bridge Rectifier ■ Features  Glass passivated chip  Low reve

D4SB10-D4SB100 SINGLE-PHASE BRIDGE RECTIFIER ￠.134(8.4) .122(3.1) VOLTAGE RANGE: 100 - 1000V CURRENT: 10 A Features · Plastic Package has Underwrite

7MBR35SB120 IGBT MODULE (S series) 1200V / 35A / PIM IGBT Modules Features · Low VCE(sat) · Compact package · P.C. board mount · Converter diode bri

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier 2SB1375 Unit: mm • Low saturation voltage: VCE (sat) = −

Power Transistor (−50V, −2A) 2SB1443 Features 1) Low saturation voltage. VCE (sat) = −0.35V (Max.) at IC / IB = −1A / 50mA. 2) Excellent DC current