SB10-09 datasheet | Specifications & PDF Download

B1094 - 2SB1094

DATA SHEET www.DataSheet4U.com SILICON POWER TRANSISTOR 2SB1094 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIER FEATURES • The 2

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SavantIC

B1098 - 2SB1098

SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-220F package ·Complement to type 2SD1589 ·DARLINGTON ·H

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JGD

SB1090 - Schottky Barrier Rectifiers

Features * Low power loss, high efficiency * Guard-ring for overvoltage protection * High surge current capability * Compliant to RoHS Directive 2011/

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JGD

SB1090F - Isolated Schottky Barrier Rectifiers

Features * Low power loss, high efficiency * Guard-ring for overvoltage protection * High surge current capability * Compliant to RoHS Directive 2011/

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Fairchild Semiconductor

KSB1097 - Low Frequency Power Amplifier

KSB1097 KSB1097 Low Frequency Power Amplifier • Low Speed Switchng Industrial Use • Complement to KSD1588 1 TO-220F 2.Collector 3.Emitter 1.Base

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Fairchild Semiconductor

KSB1098 - Low Frequency Power Amplifier

KSB1098 KSB1098 Low Frequency Power Amplifier • Low Speed Switchng Industrial Use • Complement to KSD1589 1 TO-220F 2.Collector 3.Emitter 1.Base

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ETC

B1096 - 2SB1096

www.DataSheet4U.com

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Sanyo Semicon Device

SB100-09K - 90V/ 10A Rectifier

Ordering number:EN2830B SB100-09K Schottky Barrier Diode (Twin Type · Cathode Common) 90V, 10A Rectifier Applications · High frequency rectification

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INCHANGE

KSB1097 - PNP Transistor

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current:IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -5A ·Minimu

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Sanyo Semicon Device

SB10-09 - 90V/ 1A Rectifier

Ordering number:EN2829B SB10-09F Schottky Barrier Diode 90V, 1A Rectifier Applications · High frequency rectification (switching regulators, convert

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Sanyo Semicon Device

SB10-09F - 50V/ 1A Rectifier

Ordering number:EN2829B SB10-09F Schottky Barrier Diode 90V, 1A Rectifier Applications · High frequency rectification (switching regulators, convert

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JGD

SB1090FCT - Dual Common Cathode Schottky Rectifiers

Features * Low power loss, high efficiency * Guard-ring for overvoltage protection * High surge current capability * Compliant to RoHS Directive 2011/

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Hitachi Semiconductor

2SB1091 - PNP Transistor

2SB1091 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2

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JGD

SB1090CT - Dual Common Cathode Schottky Rectifiers

Features * Low power loss, high efficiency * Guard-ring for overvoltage protection * High surge current capability * Compliant to RoHS Directive 2011/

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Sanyo Semicon Device