2SB1098 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High DC Current Gain- : hFE=2000(Min)@ (VCE= -2V, IC= -3A). Minimum Lot-to-L.

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Datasheet Specifications

Part number: 2SB1098
Manufacturer: INCHANGE
File Size: 211.77 KB
Datasheet: 2SB1098-INCHANGE.pdf
Description: PNP Transistor

Applications

* Low speed switching industrial
* Low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base

2SB1098 Distributors

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2SB1098 PNP Transistor INCHANGE

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