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2SB1017 PNP Transistor

2SB1017 Description

isc Silicon PNP Power Transistor .
Low Collector Saturation Voltage- : VCE(sat)= -1. Good Linearity of hFE. Complement to Type 2SD1408. Minimum Lot-to-L.

2SB1017 Applications

* Designed for power amplifier applications.
* Recommended for 20~25W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Volta

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Datasheet Details

Part number
2SB1017
Manufacturer
INCHANGE
File Size
213.19 KB
Datasheet
2SB1017-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1017-like datasheet