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2SB1007 PNP Transistor

2SB1007 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). Good Linearity of hFE. Complement to Type 2SD1378. Minimum Lot-to-Lot var.

2SB1007 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.7 A Collector Powe

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Datasheet Details

Part number
2SB1007
Manufacturer
INCHANGE
File Size
208.35 KB
Datasheet
2SB1007-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1007-like datasheet