2SB1005 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor .
High DC Current Gain- : hFE = 750(Min)@ IC= -1. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -50V(Min). With TO-220C package.

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Datasheet Specifications

Part number: 2SB1005
Manufacturer: INCHANGE
File Size: 209.30 KB
Datasheet: 2SB1005-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power D

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2SB1005 PNP Transistor INCHANGE

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