2SB1009 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor .
High Collector Current -IC= -2A. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -32V(Min). Good Linearity of hFE. Low Saturation Vo.

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Datasheet Specifications

Part number: 2SB1009
Manufacturer: INCHANGE
File Size: 209.33 KB
Datasheet: 2SB1009-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICP Collector C

2SB1009 Distributors

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2SB1009 PNP Transistor INCHANGE

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