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2SB1009 - PNP Transistor

2SB1009 Description

isc Silicon PNP Power Transistor .
High Collector Current -IC= -2A. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -32V(Min). Good Linearity of hFE. Low Saturation Vo.

2SB1009 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICP Collector C

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Datasheet Details

Part number
2SB1009
Manufacturer
INCHANGE
File Size
209.33 KB
Datasheet
2SB1009-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1009-like datasheet