SB120 Datasheet | Specifications & PDF Download

7MBR50SB120 IGBT MODULE (S series) 1200V / 50A / PIM IGBT Modules Features · Low VCE(sat) · Compact package · P.C. board mount · Converter diode bri

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Ordering number:EN2085B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1203/2SD1803 High-Current Switching Applications Applications · Relay driver

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www.DataSheet.co.kr Ordering number:EN2113B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1202/2SD1802 High-Current Switching Applications Applic

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Ordering number:EN2114B PNP Epitaxial Planar Silicon Transistor 2SB1205 Strobe High-Current Switching Applications Applications · Strobe, voltage re

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Ordering number:ENN2086B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1204/2SD1804 High-Current Switching Applications Applications Æ Relay drive

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SB120-SB1100 SB120 - SB1100 Features • • 1.0 ampere operation at TA = 75°C with no thermal runaway. For use in low voltage, high frequency inverters

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Ordering number:EN2112B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1201/2SD1801 High-Current Switching Applications Applications · Voltage regu

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7MBR35SB120 IGBT MODULE (S series) 1200V / 35A / PIM IGBT Modules Features · Low VCE(sat) · Compact package · P.C. board mount · Converter diode bri

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MITSUBISHI INTELLIGENT POWER MODULES PM25RSB120 FLAT-BASE TYPE INSULATED PACKAGE A B M AD S S S P AA 5678 9 11 13 15 17 19 N P 12 3 4 J B 10 12

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isc Silicon PNP Power Transistor DESCRIPTION ·High current and high fT ·Low collector-to-emitter saturation voltage ·Excellent linearity of hFE ·Fast

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UNISONIC TECHNOLOGIES CO., LTD 2SB1202 PNP PLANAR TRANSISTOR HIGH CURRENT SWITCHING APPLICATION  DESCRIPTION The UTC 2SB1202 applies to voltage re

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Ordering number : EN2112C 2SB1201/2SD1801 Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA http://onsemi.com Applications

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Ordering number : EN2085C 2SB1203/2SD1803 Bipolar Transistor (–)50V, (–)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • http://onsemi.com

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isc Silicon PNP Power Transistor DESCRIPTION ·Large current capacitance and wide ASO ·Low collector-to-emitter saturation voltage ·Fast switching spe

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2SB1202/2SD1802 Bipolar Transistor (–)50 V, (–)3 A, Low VCE(sat) (PNP)NPN Single TP/TP−FA Features • Adoption of FBET and MBIT Processes • Large Cur

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Features • Metal-Semiconductor junction with guardring • Epitaxial construction • Low forward voltage drop • High current capability • The plastic mat

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