SB150 Datasheet | Specifications & PDF Download

MPKC2SB/CB 150U60 600V FRD Module MPKC2SB/CB150U60 600V FRD Module General Description Ultra-FRD module devices are optimized to reduce losses and E

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Features • Metal-Semiconductor junction with guardring • Epitaxial construction • Low forward voltage drop • High current capability • The plastic mat

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Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2276 20.0±0.5 Unit: mm φ 3.3±0.2

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FUSB1500 / FUSB1501 — USB2.0 Full-Speed / Low-Speed Transceiver with Charger Detection April 2011 FUSB1500 — USB2.0 Full-Speed / Low-Speed Transceiv

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Power Transistors 2SB1502 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 6.0 20.0±0.5 φ 3.3±0.2 5.0±0.

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n-Channel Power MOSFET OptiMOS™ BSB150N15NZ3 Data Sheet 2.3, 2011-03-01 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB150N15NZ3 G 1 Descri

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1503 DESCRIPTION ·With TO-3PL package ·Complemen

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Date:- 30th July, 2012 Data Sheet Issue:- K1 Rectifier diode Types W0628RB/SB120 & W0628RB/SB150 Absolute Maximum Ratings PARAMETER VRRM Repetitiv

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Ordering number:EN3714 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1508/2SD2281 50V/12A High-Current Switching Applications Applications · Relay

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Rev. Oct. 08 Company Overview AEM is a global high-tech manufacturer redefining the standards of quality and value in the electronic components indus

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BLGALAXY ELECTRICAL SB120S- - - SB1100S SCHOTTKY BARRIER RECTIFIERS FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low

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DATA SHEET SB120~SB1100 1 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE 50 to 100 Volts FEATURES 1.0 ( 25.4 ) MIN. CURRENT - 1.0 Ampere DO-41 Unit: in

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Ordering number:EN3713 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1507/2SD2280 50V/7A High-Current Switching Applications Applications · Relay

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, One. 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power T

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -4A ·Low-Collector Saturation Voltage- : VCE(sat)

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Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2276 6.0 20.0±0.5 φ 3.3±0.2 5.0±0.

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1508 DESCRIPTION ·With TO-3PML package ·Low coll

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Rev. Oct. 08 Company Overview AEM is a global high-tech manufacturer redefining the standards of quality and value in the electronic components indus

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C/ J. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power T

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FUSB1500 / FUSB1501 — USB2.0 Full-Speed / Low-Speed Transceiver with Charger Detection April 2011 FUSB1500 — USB2.0 Full-Speed / Low-Speed Transceiv

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