SB150 Datasheet | Specifications & PDF Download

FUSB1500 / FUSB1501 — USB2.0 Full-Speed / Low-Speed Transceiver with Charger Detection April 2011 FUSB1500 — USB2.0 Full-Speed / Low-Speed Transceiv

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Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2276 20.0±0.5 Unit: mm φ 3.3±0.2

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Ordering number:EN3713 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1507/2SD2280 50V/7A High-Current Switching Applications Applications · Relay

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Features • Metal-Semiconductor junction with guardring • Epitaxial construction • Low forward voltage drop • High current capability • The plastic mat

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SB120-SB1100 SB120 - SB1100 Features • • 1.0 ampere operation at TA = 75°C with no thermal runaway. For use in low voltage, high frequency inverters

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C/ J. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power T

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SB 120 SB 1100 Axial lead diode Schottky barrier rectifiers diodes SB 120 SB 1100 Forward Current: 1 A Reverse Voltage: 20 to 100 V Features 

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QSB15048W Series DC-DC Converter 150 Watts xxx Series • Wide 8:1 Input Range • Single Output • Industry Standard 1/2 Brick • -40 °C to +100 °C Opera

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Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2276 6.0 20.0±0.5 φ 3.3±0.2 5.0±0.

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DATA SHEET SB120~SB1100 1 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE 50 to 100 Volts FEATURES 1.0 ( 25.4 ) MIN. CURRENT - 1.0 Ampere DO-41 Unit: in

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SB120 - SB160 1.0A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low

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, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2

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FUSB1500 / FUSB1501 — USB2.0 Full-Speed / Low-Speed Transceiver with Charger Detection April 2011 FUSB1500 — USB2.0 Full-Speed / Low-Speed Transceiv

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -4A ·Good Linearity of hFE ·Wide Area of S

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -7A ·Low-Collector Saturation Voltage- : VCE(sat)

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -4A ·Low-Collector Saturation Voltage- : VCE(sat)

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Power Transistors 2SB1502 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 6.0 20.0±0.5 φ 3.3±0.2 5.0±0.

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MPKC2SB/CB 150U60 600V FRD Module MPKC2SB/CB150U60 600V FRD Module General Description Ultra-FRD module devices are optimized to reduce losses and E

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SB120 THRU SB160 Technical Data Data Sheet N0869, Rev. C SB120 THRU SB160 SCHOTTKY RECTIFIER Features DO-41  Schottky Barrier Chip  Guard Ring Di

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SB120 - SB1B0 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 100 Volts IO : 1.0 Ampere FEATURES : * High current capability * High surge current capab

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