SB150-G Datasheet | Specifications & PDF Download

Features • Metal-Semiconductor junction with guardring • Epitaxial construction • Low forward voltage drop • High current capability • The plastic mat

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DATA SHEET SB120~SB1100 1 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE 50 to 100 Volts FEATURES 1.0 ( 25.4 ) MIN. CURRENT - 1.0 Ampere DO-41 Unit: in

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MPKC2SB/CB 150U60 600V FRD Module MPKC2SB/CB150U60 600V FRD Module General Description Ultra-FRD module devices are optimized to reduce losses and E

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Rev. Oct. 08 Company Overview AEM is a global high-tech manufacturer redefining the standards of quality and value in the electronic components indus

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Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2276 20.0±0.5 Unit: mm φ 3.3±0.2

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FUSB1500 / FUSB1501 — USB2.0 Full-Speed / Low-Speed Transceiver with Charger Detection April 2011 FUSB1500 — USB2.0 Full-Speed / Low-Speed Transceiv

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SB120 THRU SB160 Technical Data Data Sheet N0869, Rev. C SB120 THRU SB160 SCHOTTKY RECTIFIER Features DO-41  Schottky Barrier Chip  Guard Ring Di

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SB120-SB1100 SB120 - SB1100 Features • • 1.0 ampere operation at TA = 75°C with no thermal runaway. For use in low voltage, high frequency inverters

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1503 DESCRIPTION ·With TO-3PL package ·Complemen

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Rev. Oct. 08 Company Overview AEM is a global high-tech manufacturer redefining the standards of quality and value in the electronic components indus

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, One. 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power T

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SB120 thru SB1100 Schottky Barrier Rectifiers Reverse Voltage 20 to 100V Forward Current 1.0A Feature & Dimensions Flammability Classification 94V-0 *

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Features xxxx Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capabilit

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SB120 THRU SB1100 SCHOTTKY BARRIER RECTIFIER Reverse Voltage – 20 to 100 Volts Forward Current – 1.0 Amperes Features • High current capability • High

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Date:- 30th July, 2012 Data Sheet Issue:- K1 Rectifier diode Types W0628RB/SB120 & W0628RB/SB150 Absolute Maximum Ratings PARAMETER VRRM Repetitiv

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QSB15048W Series DC-DC Converter 150 Watts xxx Series • Wide 8:1 Input Range • Single Output • Industry Standard 1/2 Brick • -40 °C to +100 °C Opera

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Power Transistors 2SB1502 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 6.0 20.0±0.5 φ 3.3±0.2 5.0±0.

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Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2276 6.0 20.0±0.5 φ 3.3±0.2 5.0±0.

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Ordering number:EN3713 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1507/2SD2280 50V/7A High-Current Switching Applications Applications · Relay

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Ordering number:EN3714 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1508/2SD2281 50V/12A High-Current Switching Applications Applications · Relay

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